Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Dong Hyuk Ju"'
Publikováno v:
Experimental Gerontology, Vol 193, Iss , Pp 112475- (2024)
Background: The oxidative balance score (OBS) is a comprehensive pro- and anti-oxidative marker for assessing the risk of various metabolic diseases and cancers. However, it is not well established whether OBS is related to type 2 diabetes mellitus (
Externí odkaz:
https://doaj.org/article/9d73e785519b46ef87acaf026afec2e1
Publikováno v:
Frontiers in Endocrinology, Vol 15 (2024)
BackgroundThe metabolic score for insulin resistance index (METS-IR) is a novel non insulin-based marker that indicates the risk for metabolic syndrome and type 2 diabetes mellitus (T2DM). However, METS-IR has not been investigated in relation to all
Externí odkaz:
https://doaj.org/article/c739d4fb7d2a4c99b2dcb2767cdea256
Publikováno v:
Frontiers in Nutrition, Vol 10 (2023)
BackgroundCarcinoembryonic antigen (CEA) is a commonly used tumor marker in cancer screening. However, it has also been associated with metabolic alterations. Hepatic steatosis, the accumulation of fat in liver cells, is associated with various cardi
Externí odkaz:
https://doaj.org/article/4e22d96f775947d7a9f27a18bd0c6b63
Publikováno v:
Frontiers in Endocrinology, Vol 14 (2023)
BackgroundThe combination of gamma-glutamyl transferase (GGT) and high-density lipoprotein cholesterol (HDL-C) (GGT/HDL-C) is a novel noninsulin-based marker for assessing the risk of nonalcoholic fatty liver disease and type 2 diabetes mellitus. How
Externí odkaz:
https://doaj.org/article/1bb71a08e37449b685ed808014d61899
Publikováno v:
Antioxidants, Vol 13, Iss 1, p 107 (2024)
The oxidative balance score (OBS) is a novel composite of pro- and anti-oxidative markers for assessing the risk of cardiometabolic diseases and non-alcoholic fatty liver disease (NAFLD). However, it has not yet been established whether the OBS is re
Externí odkaz:
https://doaj.org/article/1c93d762168846a09c75e79e0bbe64cc
Publikováno v:
Electrochimica Acta. 54:3630-3637
Hydrophilic fumed silica (SiO 2 )/polyacrylonitrile (PAN) composite electrolyte membranes were prepared by electrospinning composite solutions of SiO 2 and PAN in N,N-dimethylformamide (DMF). Among electrospinning solutions with various SiO 2 content
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe3c4222c0b2f9d113eb10d9e4408b6
https://doi.org/10.1016/j.electacta.2009.01.039
https://doi.org/10.1016/j.electacta.2009.01.039
Publikováno v:
IEEE Transactions on Electron Devices. 45:1253-1262
Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET's. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea6a20a31997d93755a56375035951e
https://doi.org/10.1109/16.678529
https://doi.org/10.1109/16.678529
Publikováno v:
IEEE Electron Device Letters. 18:312-314
The effect of nitrogen (N/sub 14/)implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0.25-/spl mu/m dual-gate transistors (both p- and n-channel), MOS capacitor quasi-static C-V curve, SIMS profile, poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea0bc4a4e2d8ea5dd639baa7f9187c00
https://doi.org/10.1109/55.596922
https://doi.org/10.1109/55.596922
Autor:
Darin Chan, Gert Burbach, C. Lee, R. vanBentum, D. Greenlaw, A. Wei, Dong-Hyuk Ju, S. Krishnan, N. Kepler, Mario M. Pelella, M. Fuselier, D. Wristers, C. Riccobenc, M. Lee, G. Hill, D. Wu, S. Chan, Ping Yeh, S. R. Sundararajan, W. Maszara, S. Sinha, William G. En, Olov Karlsson
Publikováno v:
2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).
The key performance advantages and challenges of SOI CMOS for ULSI applications are discussed in detail. Included is an insightful analysis comparing the performance benefits of SOI technologies over its bulk-Si counterpart. The hysteretic trends of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9afe384e4fc774fc69ea6375eca1fe9a
https://doi.org/10.1109/soic.2001.957957
https://doi.org/10.1109/soic.2001.957957
Publikováno v:
2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).
Stress from shallow trench isolation was found to cause up to 19% variation in 0.18 /spl mu/m technology SO! devices. Partially depleted SOI devices were fabricated on a 0.18 /spl mu/m technology with 100 nm thick silicon film and 200 nm thick buried
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b805d3e69fc15648cd2a2b13912ed3be
https://doi.org/10.1109/soic.2001.957997
https://doi.org/10.1109/soic.2001.957997