AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Autor: Hee Ho Lee, Myunghan Bae, Sung-Hyun Jo, Jang-Kyoo Shin, Dong Hyeok Son, Chul-Ho Won, Hyun-Min Jeong, Jung-Hee Lee, Shin-Won Kang

Publikováno v: Sensors, Vol 15, Iss 8, Pp 18416-18426 (2015)

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the senso

Externí odkaz: https://doaj.org/article/fe83304692c44a1bb0be225883c479b2

Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET

Autor: Sorin Cristoloveanu, Terirama Thingujam, Dong-Hyeok Son, Jung-Hee Lee, Jeong-Gil Kim

Publikováno v: IEEE Transactions on Electron Devices. 67:816-821

In the past couple of years, GaN-based vertical FETs have been explored to complement their potential logic applicability along with its well-known advantages in high-power and RF applications. In this article, the performances of short-channel gate-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0e7949086e99c3e0e5aacc13ab47752
https://doi.org/10.1109/ted.2019.2963427

Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Autor: Dong-Hyeok Son, Gerard Ghibaudo, Terirama Thingujam, Ki-Sik Im, Jung-Hee Lee, Christoforos G. Theodorou, Dae-Hyun Kim, Jeong-Gil Kim, In Man Kang, Sorin Cristoloveanu

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩

GaN-based materials are expected to show excellent immunity against short-channel effects because they have relatively lower permittivity and higher electron effective mass, compared to other materials such as Si, Ge, and In(Ga)As. To further reduce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e46ded43ca1e668a1349fabb04e054d
https://hal.archives-ouvertes.fr/hal-02969751

Low voltage operation of GaN vertical nanowire MOSFET

Autor: Dae-Hyun Kim, Young-Woo Jo, Ki-Sik Im, Hwan Soo Jang, In Man Kang, Jae Hwa Seo, Chul-Ho Won, Dong-Hyeok Son, Jung-Hee Lee, Yong Soo Lee

Publikováno v: Solid-State Electronics. 145:1-7

GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c24b6835fb8afe853bb097d99dcf0714
https://doi.org/10.1016/j.sse.2018.03.001

Optimization of GAA vertical nanowire performance for logic application

Autor: Jeong-Gil Kim, Dong-Hyeok Son, Terirama Thingujam, Jung-Hee Lee, Yong Soo Lee, In Man Kang

Publikováno v: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

In this work, we analyze the vertical GaN nanowire and investigate its logic performance and improvement through 3D simulation. The trapping effects are well analyzed and the curves are closely fitted to the experimental work. Further, this work sugg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69d6be3de532e6ae9247fb88f2ca26e7
https://doi.org/10.1109/eurosoi-ulis45800.2019.9041873