Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Dong Hun Yu"'
Autor:
Hyoungcheol Kwon, Imhee Won, Songhee Han, Dong-Hun Yu, Deuk-Chul Kwon, Yeon Ho Im, Felipe Iza, Dongyean Oh, Sung-Kye Park, Seonyong Cha
Publikováno v:
Physics of Plasmas. 29:093510
Vertical scaling technique faces a physical limitation in 3D NAND device fabrication, even assuming superior etching technology. Another promising scaling technique to increase the storage density is lateral scaling, which increases the number of hol
Publikováno v:
Journal of Physics D: Applied Physics. 55:415205
Although the ion temperature can considerably affect bulk plasma parameters and ion angle distribution functions arriving at the substrate, limited experiments have been conducted on this phenomenon because ion temperature measurement is difficult. F
Autor:
Yeong Geun Yook, Hae Sung You, Jae Hyeong Park, Won Seok Chang, Deuk Chul Kwon, Jung Sik Yoon, Kook Hyun Yoon, Sung Sik Shin, Dong Hun Yu, Yeon Ho Im
Publikováno v:
Journal of Physics D: Applied Physics. 55:255202
We present a topographic simulation platform that simultaneously considers 3D surface movement, neutral and ion transport, and surface reactions in plasma high-aspect-ratio (HAR) oxide etching. The hash map data structure is considered for an effecti
Publikováno v:
Journal of The Korean Society of Physical Medicine. 13:85-94
Publikováno v:
Computer Physics Communications. 219:297-302
In order to reduce the computing time in simulation of radio frequency (rf) plasma sources, various numerical schemes were developed. It is well known that the upwind, exponential, and power-law schemes can efficiently overcome the limitation on the
Publikováno v:
Current Applied Physics. 16:644-650
In order to overcome limitations on the simulation time step for fluid transport simulations of high density plasma discharges, the dielectric relaxation scheme (DRS) was developed. By imitating a realistic and physical shielding process of electric
Autor:
Jae Hyeong Park, Deuk Chul Kwon, Yeong Geun Yook, Hae Sung You, Sung-Kye Park, Dong Hun Yu, Jung Sik Yoon, Min Ju Oh, Yeon-Ho Im, Won-Seok Chang, Hyoung Chul Kwon
Publikováno v:
Journal of Physics D: Applied Physics. 53:385207
Publikováno v:
Physics of Plasmas. 27:073507
The volume-averaged global plasma model has been widely used to analyze the characteristics of plasma, although the spatial variation of plasma parameters cannot be obtained from it. It has also been used to obtain temporal plasma parameters for puls
Autor:
Mi Young Song, Jae Hyeong Park, Shin-Jae You, Dae Woong Kim, Yeong Geun Yook, Won-Seok Chang, Yeon-Ho Im, Hyoungcheol Kwon, Sung Kye Park, Jung Sik Yoon, Hae Sung You, Deuk Chul Kwon, Dong Hun Yu
Publikováno v:
Applied Surface Science. 515:145975
We propose a semi-global surface reaction model to capture simultaneous polymer deposition and oxide etching in fluorocarbon plasma. The critical parameters of this model within reasonable ranges can be determined using predesigned experimental data
Publikováno v:
2018 IEEE International Conference on Plasma Science (ICOPS).
The volume-averaged global plasma model has been widely used to obtain spatially averaged plasma parameters on geometry or process parameters such as applied power, pressure, and gas flow. The characteristics of the plasma are determined by the parti