Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Dong Hee Rhie"'
Publikováno v:
Journal of Electrical Engineering and Technology. 9:1719-1723
In this study, the microwave dielectric properties of nano spheroidization glass powders added Ba(Zn1/3Ta2/3)O3 ceramics prepared by solid state reaction have been investigated. Adding (Ba0.4Ca0.6)SiO3 nano spheroidization glass powders could effecti
Publikováno v:
Journal of Electrical Engineering and Technology. 8:808-812
Multilayer capacitors with high ripple current and high capacitance were manufactured. The electrical properties of these capacitors were characterized for potential application for DC-link capacitors in hybrid electric vehicle inverters. Internal el
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:665-670
Lead-free piezoelectric () ceramics doped with CuO and were fabricated using the conventional oxide-mixing technique. With increasing content of CuO and , the dielectric constant() and mechanical quality factor() value increased, while electromechani
Autor:
Dong-Hee Rhie, Ho-Joon Seo
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 18:675-681
is widely used as gas insulation medium because of having excellent dielectric and arc-quenching properties. However the use of it is getting to be suppressed from the viewpoint of mitigating global warming. For the development of environmentally-ben
Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics
Autor:
Ey Goo Kang, N. G. Kim, Sangsig Kim, Je Yoon Kim, Sang Won Park, Dong Hee Rhie, Man Young Sung, Min Chul Jung, C. H. Kim
Publikováno v:
Microelectronics Reliability. 44:1479-1483
The electrothermal simulation of high voltageLIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simul
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 16:1242-1247
In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH and NH were used to obtain SiN films in the range of 100∼300 on p-type (100) GaAs substrate. To determine interface characteristics of the
Publikováno v:
2005 IEEE Instrumentationand Measurement Technology Conference Proceedings.
In oil-filled equipment such as transformers, partial discharge or local overheating will precede a final shutdown. Accompanied with such problems is a decomposition of insulating material into gases, which are dissolved into the transformer oil. The
Publikováno v:
2005 IEEE Russia Power Tech.
In oil-filled power equipment such as power transformers, partial discharge or local overheating will precede a final shutdown. Accompanied with such problems is a decomposition of insulating material into gases, which are dissolved into the transfor
Publikováno v:
2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668).
In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional
Publikováno v:
Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials.
A method is presented for the development of the PC-based multi-biosensor system for detecting various components of the aqueous solution by measuring the DO (dissolved oxygen) concentration. The system consists of 6-channel signal conditioning circu