Zobrazeno 1 - 10
of 777
pro vyhledávání: '"Dong‐Sing Wuu"'
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024)
Abstract In this study, arrays of μLEDs in four different sizes (5 × 5 μm2, 10 × 10 μm2, 25 × 25 μm2, 50 × 50 μm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single lay
Externí odkaz:
https://doaj.org/article/2084a40551ed46129c6dc96c4f7d5599
Autor:
Shao-Hua Lin, Yu-Yun Lo, Yu-Hsuan Hsu, Chien-Chung Lin, Hsiao-Wen Zan, Yi-Hsin Lin, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024)
Abstract In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication proces
Externí odkaz:
https://doaj.org/article/9926f8d15ce247a89f1bd77f06a082ec
Autor:
Chia Hao Yu, Wei Hsiang Chiang, Yi-Ho Chen, Seiji Samukawa, Dong Sing Wuu, Chin-Han Chung, Ching-Lien Hsiao, Ray Hua Horng
Publikováno v:
Materials Today Advances, Vol 23, Iss , Pp 100519- (2024)
This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (N
Externí odkaz:
https://doaj.org/article/f68c5c76581d4074bd8a0755f3da6f39
Autor:
Yu-Hsuan Hsu, Yun-Cheng Hsu, Chien-Chung Lin, Yi-Hsin Lin, Dong-Sing Wuu, Hao-Chung Kuo, Seiji Samukawa, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100496- (2024)
In this study, micro-light emitting diodes array (μLEDs) with dimensions of 5 μm and 15 μm chip size were fabricated using Neutral Beam Etching (NBE) processes. Size-dependent issues of μLEDs processed by traditional inductively coupled plasma-re
Externí odkaz:
https://doaj.org/article/8791b2881e164017b5f1692ae1184ae5
Autor:
Ming-Jie Zhao, Yao-Tian Wang, Jia-Hao Yan, Hai-Cheng Li, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100722- (2024)
High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and prefe
Externí odkaz:
https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9
Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching
Autor:
Yu-Yun Lo, Yi-Ho Chen, Yun-Cheng Hsu, Tzu-Yi Lee, Yu-Ying Hung, Yu-Cheng Kao, Hsiao-Wen Zan, Dong- Sing Wuu, Hao-Chung Kuo, Seiji Samukawa, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100485- (2024)
The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral b
Externí odkaz:
https://doaj.org/article/3411206bf11e465db21ce6fd9c2bab3b
Autor:
Ming-Jie Zhao, Jie Huang, Hai-Cheng Li, Qi-Zhen Chen, Qi-Hui Huang, Wan-Yu Wu, Dong-Sing Wuu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100672- (2024)
High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing
Externí odkaz:
https://doaj.org/article/618f164bafba41b785f7e7f3bc141019
Autor:
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 4213-4223 (2023)
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition. Saturation experiments have been applied in the plasma pow
Externí odkaz:
https://doaj.org/article/e0435603c1124616b41be1f7f8e15e96
Autor:
Mingjie Zhao, Jiahao Yan, Yaotian Wang, Qizhen Chen, Rongjun Cao, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wenzhang Zhu
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 690 (2024)
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility wi
Externí odkaz:
https://doaj.org/article/f1e593b8d6de457a9414f29f81bdbaf3
Autor:
Yun-Cheng Hsu, Yu-Hsuan Hsu, Chien-Chung Lin, Ming Hsien Wu, Hao Chung Kuo, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Next Nanotechnology, Vol 7, Iss , Pp 100101- (2025)
This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emit
Externí odkaz:
https://doaj.org/article/4129a32d549c4dc498279341e6ce04ed