Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Dondee Navarro"'
Autor:
Fernando Avila Herrera, Yoko Hirano, Takahiro Iizuka, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Hans Jurgen Mattausch, Akira Ito
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://doaj.org/article/1d060eb085884fa4be2db5c018e96eaf
Autor:
Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tapas Kumar Maiti, Dondee Navarro, Hans Jurgen Mattausch
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1056-1063 (2018)
Requirements for compact modeling to predict circuit power loss accurately are the focus of this investigation. Most important is the capturing of the differences between an ideal carrier reaction within the used devices and the reality during circui
Externí odkaz:
https://doaj.org/article/5ca6c69e45f64e1aaab05129f2b6000e
Autor:
Naoto Yorino, Dondee Navarro, Hans Jurgen Mattausch, Kenshiro Sato, Mitiko Miura-Mattausch, Shinya Sekizaki, Yoshifumi Zoka
Publikováno v:
IEICE Transactions on Electronics. :119-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58baa4365817722b19a0294461572c1b
https://doi.org/10.1587/transele.2019ecp5010
https://doi.org/10.1587/transele.2019ecp5010
Autor:
Dondee Navarro, Takao Yamamoto, Takahiro Iizuka, Takuya Umeda, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hans Jurgen Mattausch
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
High voltage MOSFETs are widely used for bias ranges of a few dozens of volts to a few hundred of volts. The trench-type MOSFET is one of the key devices for realizing this wide range applications. However, the device characteristics are not yet well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e7f79f5a82b6018f853d676d8d33c0
https://doi.org/10.1109/sispad54002.2021.9592591
https://doi.org/10.1109/sispad54002.2021.9592591
Autor:
Hans Jurgen Mattausch, Hirotaka Takatsuka, Dondee Navarro, Mitiko Miura-Mattausch, Nezam Rohbani, Sara Mohammadinejad, T. K. Maiti, Hiroaki Gau
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1675-1684
Power dissipation of on-chip cache memories contributes a large portion of a processor’s power consumption. Therefore, power management of cache memories is crucial in modern processors. On the other hand, bias temperature instability (BTI) is one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e1710c4c1b1dcd33dbc8508387a7b15
https://doi.org/10.1109/tvlsi.2019.2909488
https://doi.org/10.1109/tvlsi.2019.2909488
Autor:
Dondee Navarro, Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Takahiro Iizuka, Hafizur Rahaman, Arnab Mukhopadhyay, T. K. Maiti, Sandip Bhattacharya, Hideyuki Kikuchihara, Sadayuki Yoshitomi
Publikováno v:
IEICE Transactions on Electronics. :487-494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83de4c50e6e1f30d38646888b0441ad3
https://doi.org/10.1587/transele.2018ecp5046
https://doi.org/10.1587/transele.2018ecp5046
Autor:
U. Feldmann, Mitiko Miura-Mattausch, Takuya Umeda, Hideyuki Kikuchihara, Y. Hirano, K. Molnar, Takahiro Iizuka, Takashige Yonamine, W. Posch, Hans Jurgen Mattausch, Dondee Navarro, Hirofumi Kishigami, Hiroyuki Hashigami
Publikováno v:
IEEE Transactions on Electron Devices. 66:52-59
The additional implanted channel-dopant layer of depletion-mode (DM) MOSFETs induces, at the same time, two main currents, namely, an accumulation current at the channel surface and a neutral-region current flowing deep in the implanted buried layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3119a5f9555481a670bce5e0a0560587
https://doi.org/10.1109/ted.2018.2867634
https://doi.org/10.1109/ted.2018.2867634
Autor:
Hans Jurgen Mattausch, Y. Hirano, Hideyuki Kikuchihara, Takahiro Iizuka, Mitiko Miura-Mattausch, Akira Ito, Dondee Navarro, Fernando Avila Herrera
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::423905b6d6361b0ad91e19a0d4463502
https://ieeexplore.ieee.org/document/8879528/
https://ieeexplore.ieee.org/document/8879528/
Autor:
Hans Juergen Mattausch, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Takahiro Iizuka, Keita Sakamoto, Shunsuke Baba
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Radiation can generate huge amounts of carriers in thin-layer SOI-MOSFETs, which change the device-internal potential distribution, known as an origin for of malfunction of circuits. 2D-numerical device-simulation analysis shows that the radiation-ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa411f3aa33436304eb2618556c280a
https://doi.org/10.23919/sispad49475.2020.9241636
https://doi.org/10.23919/sispad49475.2020.9241636
Autor:
Hans Jurgen Mattausch, Takahiro Iizuka, Daniel Nestor Rus, Mitiko Miura-Mattausch, Hidenori Kikuchihara, Dondee Navarro
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Further compact-model development for LDMOS is reported, enabling concurrent device and circuit optimizations by only varying the ratio between gate-overlap length $(L_{\mathrm{o}\mathrm{v}\mathrm{e}\mathrm{r}})$ and resistive-drift length $(L_{\math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cff6308fb1fe55d0307eb7cbbc8a46
https://doi.org/10.23919/sispad49475.2020.9241665
https://doi.org/10.23919/sispad49475.2020.9241665