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pro vyhledávání: '"Donavan Leonard"'
Autor:
Patrick B. Shea, Paul Brabant, Jonathan D. Poplawsky, Thomas Knight, Kevin Mercurio, Chung Keith H, Thomas N. Adam, Donavan Leonard, Eric J. Jones
Publikováno v:
BCICTS
We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtaine