Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Donald Y. C. Lie"'
Publikováno v:
Applied Sciences, Vol 14, Iss 7, p 3080 (2024)
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from
Externí odkaz:
https://doaj.org/article/14e3d99344cc40479a7c0f18a1faa146
Autor:
Yang Liu, Clint Sweeney, Jill C. Mayeda, Jerry Lopez, Paul E. Lie, Tam Q. Nguyen, Donald Y. C. Lie
Publikováno v:
Biosensors, Vol 13, Iss 2, p 191 (2023)
The COVID-19 outbreak has caused panic around the world as it is highly infectious and has caused about 5 million deaths globally. A robust wireless non-contact vital signs (NCVS) sensor system that can continuously monitor the respiration rate (RR)
Externí odkaz:
https://doaj.org/article/e8a3ea17858d4a4e8a2b7ef38a8337c9
Autor:
Travis Hall, Donald Y. C. Lie, Tam Q. Nguyen, Jill C. Mayeda, Paul E. Lie, Jerry Lopez, Ron E. Banister
Publikováno v:
Sensors, Vol 17, Iss 11, p 2632 (2017)
It has been the dream of many scientists and engineers to realize a non-contact remote sensing system that can perform continuous, accurate and long-term monitoring of human vital signs as we have seen in many Sci-Fi movies. Having an intelligible se
Externí odkaz:
https://doaj.org/article/1a1f120b8f824d39907c0f3cb68a73e0
Autor:
Bhargava Teja Nukala, Taro Nakano, Amanda Rodriguez, Jerry Tsay, Jerry Lopez, Tam Q. Nguyen, Steven Zupancic, Donald Y. C. Lie
Publikováno v:
Biosensors, Vol 6, Iss 4, p 58 (2016)
Gait analysis using wearable wireless sensors can be an economical, convenient and effective way to provide diagnostic and clinical information for various health-related issues. In this work, our custom designed low-cost wireless gait analysis senso
Externí odkaz:
https://doaj.org/article/b1ea271dff4b40428c18a3f4ce3cd1e3
Publikováno v:
Electronics; Volume 12; Issue 13; Pages: 2869
We demonstrate in this work effective linearization on a millimeter-wave (mm-Wave) broadband monolithic gallium nitride (GaN) power amplifier (PA) using digital predistortion (DPD). The PA used is a two-stage common-source (CS)/2-stack PA that operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::9e5406d1220cd55879092e9a3ac2fe4c
Publikováno v:
Electronics; Volume 11; Issue 5; Pages: 683
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of 24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are presented in this work. First, a single-ended broadband PA that empl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1177d7902fdcbcb56f981d109d53dae6
https://doi.org/10.3390/electronics11050683
https://doi.org/10.3390/electronics11050683
Autor:
Donald Y. C. Lie, J. Lopez
Publikováno v:
AIP Conference Proceedings.
A fully monolithic 1‐Dimensional (1‐D) AC‐coupled Voltage‐Controlled‐Oscillators (VCOs) phased‐array network design will be presented in this paper. This radio‐frequency (RF) VCO array integrates on‐chip inductors, varactors and bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc413b6357f1a93df8fb6aaf67ac8de9
https://doi.org/10.1063/1.3574851
https://doi.org/10.1063/1.3574851
Autor:
Donald Y. C. Lie
Publikováno v:
Open Journal of Applied Biosensor. :77-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75f7bb32addd7544871d818bd3e43cd
https://doi.org/10.4236/ojab.2013.23009
https://doi.org/10.4236/ojab.2013.23009
Publikováno v:
IEEE Microwave and Wireless Components Letters. 22:277-278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2b634cb3c7d017d3044dc8d5e25dcc7
https://doi.org/10.1109/lmwc.2012.2197972
https://doi.org/10.1109/lmwc.2012.2197972
Autor:
Donald Y. C. Lie, Jiro Yota, Wei Xia, V. Kerametlian, R. Williams, Dim-Lee Kwong, Atul Joshi, R. Zwingman, Byoung Woon Min, Dennis Cerney
Publikováno v:
SPIE Proceedings.
Severe hot-carrier-induced device lifetime degradation has been observed on deep submicron N-MOSFETs after they are processed through the backend for multi-layer-metal interconnect. Our experimental data show that the hot-carrier lifetime degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c44c6a645f784885d34dfc9a56d02ae
https://doi.org/10.1117/12.284599
https://doi.org/10.1117/12.284599