Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Autor: Erik D. Roede, Aleksander B. Mosberg, Donald M. Evans, Edith Bourret, Zewu Yan, Antonius T. J. van Helvoort, Dennis Meier

Publikováno v: APL Materials, Vol 9, Iss 2, Pp 021105-021105-6 (2021)

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO3. Surface charging is achieved by local ion (positive charging) and electron (positive and neg

Externí odkaz: https://doaj.org/article/4b9904712bbe488892424b394f407187

Improper ferroelectric domain walls

Autor: J. M. Gregg, R. G. P. McQuaid, Dennis Meier, Ch. Cochard, Donald M. Evans, Andres Cano

Publikováno v: Domain Walls
Domain Walls-From Fundamental Properties to Nanotechnology Concepts
Dennis Meier; Jan Seidel; Marty Gregg; Ramamoorthy Ramesh. Domain Walls-From Fundamental Properties to Nanotechnology Concepts, Oxford University Press, 2020, 9780198862499. ⟨10.1093/oso/9780198862499.003.0006⟩

This chapter focuses on the specific physical properties at domain walls in ferroelectric materials where the spontaneous electric polarization appears as a by-product of a structural or magnetic phase transition, and not as its primary order paramet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b22b3d0b029f6bce23defee5d8b1cf23
https://opus.bibliothek.uni-augsburg.de/opus4/files/96016/96016.pdf

Application of a long short-term memory for deconvoluting conductance contributions at charged ferroelectric domain walls

Autor: Didrik Rene Småbråten, Sverre Magnus Selbach, Trygve Magnus Ræder, Stephan Krohns, Joshua C. Agar, Donald M. Evans, Dennis Meier, Edith Bourret, Antonius T. J. van Helvoort, Theodor S. Holstad, Jakob Schaab, Tor Grande, Zewu Yan

Publikováno v: npj Computational Materials, Vol 6, Iss 1, Pp 1-7 (2020)
npj Computational Materials, 6 (1)
npj Computational Materials
npj Computational Materials, vol 6, iss 1

Ferroelectric domain walls are promising quasi-2D structures that can be leveraged for miniaturization of electronics components and new mechanisms to control electronic signals at the nanoscale. Despite the significant progress in experiment and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76d0c8928e470b1b1d533dede707132e
http://link.springer.com/article/10.1038/s41524-020-00426-z

Resolving structural changes and symmetry lowering in spinel FeCr2S4

Autor: Donald M. Evans, Ola G. Grendal, L. Prodan, Maximilian Winkler, Noah Winterhalter-Stocker, Philipp Gegenwart, Somnath Ghara, Joachim Deisenhofer, István Kézsmárki, V. Tsurkan

The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6641dc5d160af46d50eb34a7eed1060a

Strain Driven Conducting Domain Walls in a Mott Insulator

Autor: Lukas Puntigam, Markus Altthaler, Somnath Ghara, Lilian Prodan, Vladimir Tsurkan, Stephan Krohns, István Kézsmárki, Donald M. Evans

Publikováno v: Advanced Electronic Materials. 8:2200366

Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e62159b0e446f8a367f8eb3fdd09662
https://doi.org/10.1002/aelm.202200366