Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Donald C. Reynolds"'
Autor:
Kouji Hazu, Satoru Adachi, Gene Cantwell, Donald C. Reynolds, Takayuki Sota, Cole W. Litton, Sigefusa Chichibu
Publikováno v:
physica status solidi (c). 2:890-895
We have investigated free excitons and biexcitons of bulk ZnO by time-integrated and spectrally-resolved four-wave mixing. The polarization- and wave-vector-dependent FWM signals for A and B excitons demonstrate clearly that the valence-band ordering
Autor:
Donald C. Reynolds, Satoru Adachi, Kouji Hazu, T. Sota, K. Torii, Cole W. Litton, Shigefusa F. Chichibu, G. Cantwell
Publikováno v:
Journal of Applied Physics. 95:5498-5501
Time-integrated and spectrally resolved four-wave mixing (FWM) has been applied to study the impact of the k-linear term on nonlinear optical response of the C-exciton manifold in ZnO. From the excitation wavelength dependence of the FWM signal, we h
Autor:
Lijun Wang, Donald C. Reynolds, Larry E. Halliburton, Nancy C. Giles, N. Y. Garces, David C. Look
Publikováno v:
Journal of Electronic Materials. 32:766-771
Electron paramagnetic resonance (EPR) has been used to monitor the diffusion of lithium ions into single crystals of ZnO. The in-diffusion occurs when a crystal is embedded in LiF powder and then held in air at temperatures near 750°C for periods of
Publikováno v:
Journal of Oral and Maxillofacial Surgery. 58:19-26
Purpose: This study evaluated the safety and efficacy of increasing doses of intranasal butorphanol (Stadol NS, Bristol-Myers Squibb, New York, NY) compared with placebo in controlling moderate to severe pain after removal of bony impacted third mola
Autor:
J. Solomon, Adam William Saxler, David C. Look, J. E. Van Nostrand, Qianghua Xie, Donald C. Reynolds
Publikováno v:
Journal of Applied Physics. 87:8766-8772
Unintentionally doped and silicon doped GaN films prepared by molecular beam epitaxy using ammonia are investigated. Hall, secondary ion mass spectroscopy (SIMS), photoluminescence, and x-ray data are utilized for analysis of sources of autodoping of
Publikováno v:
Journal of Electronic Materials. 29:448-451
Because of the high concentration of threading dislocations, the reverse current-voltage (I–V) characteristics for either homo- or heterojunctions made on GaN-based materials grown on sapphire often show a strong electric field dependence (called a
Autor:
David C. Look, G. Cantwell, W. C. Harsch, Donald C. Reynolds, Cole W. Litton, R. L. Jones, B. Jogai
Publikováno v:
Journal of Luminescence. 82:173-176
The way in which in-grown strain impacts the optical properties of crystals can be revealed when combined with annealing studies. During the annealing process strains may be relieved, and when they are, the intrinsic energy bands adjust to these chan
Publikováno v:
Physical Review B. 60:2340-2344
The emission and reflection spectra of ZnO have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Free-exciton emission is observed for the first time. Both the ${\ensuremath
Publikováno v:
Solid State Communications. 109:683-686
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of ∼835°C. The as-grown sample, and the same sample annealed at 830°C, show a single dominant donor-bound-exciton (D0, X) emission li
Autor:
D. Schwall, David C. Look, M. Harris, P. W. Yip, Michael J. Suscavage, Sheng Qi Wang, R. L. Jones, John S. Bailey, Donald C. Reynolds, Cole W. Litton, Michael J. Callahan, David Bliss, L.O. Bouthillette
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:287-292
Zinc Oxide crystals have historically been grown in hydrothermal autoclaves with a basic mineralizer; however, doubts have been raised about the quality of such crystals because they have often exhibited large x-ray rocking curve widths and low photo