Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Donald A. Hitko"'
Autor:
Yakov Royter, Irma Valles, Samuel Kim, Deborah Winklea, Thomas C. Oh, Maggy Lau, Donald A. Hitko, Q. Jane Gu, James Chingwei Li, Steven T. W. Chen, Zhiwei Xu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:1219-1227
Programmable active bandpass filters (BPFs) have been designed in a chip-scale heterogeneous integration technology, which intimately integrates InP HBTs on a deep scaled CMOS technology. Therefore, the active BPF can leverage both high performance o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7784ea84e51c11161747a21d76d2734b
https://doi.org/10.1109/tmtt.2015.2406701
https://doi.org/10.1109/tmtt.2015.2406701
Autor:
Dustin Le, Yakov Royter, Donald A. Hitko, K.R. Elliott, Margaret F. Boag-O'Brien, Daniel Zehnder, Steven T. W. Chen, Pamela R. Patterson, Thomas C. Oh, M.C. Montes, James Chingwei Li, Samual Kim, Tahir Hussain, Aurelio Lopez, Marko Sokolich, Fiona C. Ku, David H. Chow, Moonmoon Akmal, J. Duvall, Irma Valles, Eason F. Wang, Peter D. Brewer
Publikováno v:
ECS Transactions. 50:1047-1054
Historically, compound semiconductors have enjoyed the benefit of material properties that lend themselves to high performance electron devices, but the ability to fabricate complex, high transistor count ICs is limited by the relative immaturity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d6e76f7715c52a2d0f7c3a6e557cbd
https://doi.org/10.1149/05009.1047ecst
https://doi.org/10.1149/05009.1047ecst
Autor:
Maggy Lau, Donald A. Hitko, Yakov Royter, Julia McArdle-Moore, Steven T. W. Chen, Samuel Kim, James Chingwei Li, Thomas C. Oh, Irma Valles, Zhiwei Xu
Publikováno v:
IEEE Microwave and Wireless Components Letters. 24:47-49
A tunable active band pass filter (BPF) has been designed in a chip-scale heterogeneous integration technology, which intimately integrates InP HBTs on a deep scaled CMOS technology. The BPF test chip consists of a programmable gain amplifier (PGA),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::212af3f08ccfb1a4237daf9ded28657d
https://doi.org/10.1109/lmwc.2013.2287236
https://doi.org/10.1109/lmwc.2013.2287236
Autor:
Yakov Royter, Joseph F. Jensen, Tahir Hussain, James Chingwei Li, D.S. Matthews, Pamela R. Patterson, Daniel Zehnder, Donald A. Hitko, K.R. Elliott
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2663-2670
Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72981f6bedb9444f415a4c42a9f02f4f
https://doi.org/10.1109/jssc.2009.2026819
https://doi.org/10.1109/jssc.2009.2026819
Autor:
Donald A. Hitko, Rajesh D. Rajavel, Marko Sokolich, Peter M. Asbeck, James Chingwei Li, Tahir Hussain, Ivan Milosavljevic, Stephen Thomas, Yakov Royter, Charles H. Fields
Publikováno v:
Solid-State Electronics. 51:870-881
The high operating power density and aggressively scaled geometries associated with 400+ GHz InP-Based DHBTs present a new challenge in device design and thermal management. In order to assess the effects of self-heating on the RF performance, S -par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d04125a16b836d23ccb1e238cd8aed
https://doi.org/10.1016/j.sse.2007.04.012
https://doi.org/10.1016/j.sse.2007.04.012
Autor:
Tahir Hussain, Marko Sokolich, Steven S. Bui, Peter M. Asbeck, Rajesh D. Rajavel, Yakov Royter, James Chingwei Li, Binqiang Shi, Charles H. Fields, Donald A. Hitko, Mary Y. Chen, David H. Chow
Publikováno v:
IEEE Transactions on Electron Devices. 54:398-409
Recent attempts to achieve 400 GHz or higher fT and f MAX with InP heterojunction bipolar transistors (HBTs) have resulted in aggressive scaling into the deep submicrometer regime. In order to alleviate some of the traditional mesa scaling rules, sev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::433ca15f6c740c332efa020ebee1699c
https://doi.org/10.1109/ted.2006.890370
https://doi.org/10.1109/ted.2006.890370
Autor:
Stephen Thomas, Marko Sokolich, J. Duvall, Binqiang Shi, Rajesh D. Rajavel, Steven S. Bui, David H. Chow, Donald A. Hitko, James Chingwei Li, Keith V. Guinn, Mary Y. Chen, Z. Lao
Publikováno v:
Solid-State Electronics. 51:1-5
Traditional compound semiconductor HBT technologies do not allow for the independent design of the intrinsic and extrinsic collector regions commonly found in Si BJT and SiGe HBT technologies. By using a selectively implanted buried sub-collector (SI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc250ce2048935f2554c591ba2e2df9c
https://doi.org/10.1016/j.sse.2006.11.012
https://doi.org/10.1016/j.sse.2006.11.012
Publikováno v:
IEEE Transactions on Electron Devices. 53:2540-2544
Both compound semiconductor and silicon-based bipolar junction transistors or heterojunction bipolar transistors (HBTs) require the efficient removal of heat in order to achieve a maximum level of performance and reliability. In order to satisfy both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0dd70253cca13cb0787ec47bb7c0a3
https://doi.org/10.1109/ted.2006.882270
https://doi.org/10.1109/ted.2006.882270
Autor:
Rajesh D. Rajavel, Steven S. Bui, Biqiang Shi, Mary Y. Chen, David H. Chow, Charles H. Fields, S. Thomas, Marko Sokolich, Donald A. Hitko, Yakov Royter
Publikováno v:
IEEE Transactions on Electron Devices. 51:1736-1739
We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21430744ffe7c4f68b7cf7c1730ed2f7
https://doi.org/10.1109/ted.2004.835024
https://doi.org/10.1109/ted.2004.835024
Autor:
S. Thomas, K.R. Elliott, Binqiang Shi, Donald A. Hitko, Rajesh D. Rajavel, Mary Y. Chen, James Chingwei Li, Marko Sokolich, David H. Chow, Steven S. Bui, Yakov Royter, Charles H. Fields
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:1615-1621
We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated discrete SHBT with f/sub t/>250 GHz and DHBT with f/sub t/>230 GHz. The process eliminates the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c685c0574912cb8ba1ec0a2f214597d1
https://doi.org/10.1109/jssc.2004.833560
https://doi.org/10.1109/jssc.2004.833560