Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Don W. Shaw"'
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; 1978, Vol. 26 Issue 10, p774-778, 5p
Autor:
Don W. Shaw
Publikováno v:
Journal of Crystal Growth. 65:444-453
Epitaxial growth is being applied to form increasingly complex multilayer/multimaterial structures that have the potential for major advances in electronic and optical devices. These structures, which include single crystal multimaterial composites,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4b9b96afdba32b6adfa2b98883cb8b
https://doi.org/10.1016/0022-0248(83)90085-4
https://doi.org/10.1016/0022-0248(83)90085-4
Autor:
Don W. Shaw
Publikováno v:
Journal of Crystal Growth. 47:509-517
Procedures are developed in illustrated for analysis of the crystal shapes encountered in localized growth or dissolution. It is shown that with suitable modifications a Wulff-type construction can be applied to prediction of the shapes produced in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677fdee57b1d848df44ef35eab4376e4
https://doi.org/10.1016/0022-0248(79)90133-7
https://doi.org/10.1016/0022-0248(79)90133-7
Autor:
Don W. Shaw
Publikováno v:
Journal of The Electrochemical Society. 128:874-880
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25484b88c42022b34c1160936ff6c33e
https://doi.org/10.1149/1.2127524
https://doi.org/10.1149/1.2127524
Autor:
Don W. Shaw
Publikováno v:
Journal of Crystal Growth. 31:130-141
Successful exploitation of the unique properties of III–V compound semiconductors has resulted in development of several new devices for optoelectronic and solid state microwave applications. These achievements, however, would not have been possibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c280948f7c667fb12bdfda7a65bbeb7
https://doi.org/10.1016/0022-0248(75)90122-0
https://doi.org/10.1016/0022-0248(75)90122-0
Autor:
Don W. Shaw
Publikováno v:
Journal of Crystal Growth. 35:1-9
Continuous, in situ rate measurements were used to evaluate the influence of gas phase supersaturation on the GaAs epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. Using a Ga/AsCl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492c9f9f49a0144df7968eb6a2413a39
https://doi.org/10.1016/0022-0248(76)90236-0
https://doi.org/10.1016/0022-0248(76)90236-0
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 26:774-778
Multiple-mesa GaAs Read diodes have been incorporated in a single-stage microstrip amplifier module at X band. Stable CW amplification with an output power of 12 W at 4-dB gain and 23.5-percent power-added efficiency has been demonstrated. Design con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1e6b1122e93a4c2245368b280356aa
https://doi.org/10.1109/tmtt.1978.1129485
https://doi.org/10.1109/tmtt.1978.1129485
Autor:
Don W. Shaw
Publikováno v:
Journal of Crystal Growth. 62:247-253
Liquid phase epitaxial processes for growth of mercury cadmium telluride thin films are computer simulated. Emphasis is placed on comparison of two basic approaches to growth: isothermal supersaturated deposition and the conventional, controlled cool
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3183b7fbc261796d1d48fe202c9a2c13
https://doi.org/10.1016/0022-0248(83)90302-0
https://doi.org/10.1016/0022-0248(83)90302-0
Publikováno v:
Journal of Crystal Growth. 56:324-331
The growth of thin epitaxial GaAs layers with abrupt doping level transitions on multiple large area substrates has proved to be an elusive technology. A unique approach that alleviates most of the traditional difficulties is described. Based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d038a4a093364aa045c19232d6ee5f7
https://doi.org/10.1016/0022-0248(82)90450-x
https://doi.org/10.1016/0022-0248(82)90450-x
Autor:
Don W. Shaw, James L. McAtee
Publikováno v:
Journal of Colloid and Interface Science. 21:59-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d1b9994fe202dddd64425099bc6ef71
https://doi.org/10.1016/0095-8522(66)90080-8
https://doi.org/10.1016/0095-8522(66)90080-8