Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Don O. Henderson"'
Autor:
Don O. Henderson, Y.C. Liu, X.W. Fan, R. Mu, Bin Li, D.Z. Shen, Junyan Zhang, Z. Z. Zhi, Y. M. Lu
Publikováno v:
Journal of Materials Research. 18:8-13
In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)2 and NH3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5bdfb3e4bc802844c0b600a495b954
https://doi.org/10.1557/jmr.2003.0003
https://doi.org/10.1557/jmr.2003.0003
Autor:
R. Mu, Don O. Henderson, G.Z. Zhong, D.Z. Shen, X.W. Fan, Y.C. Liu, Yaodong Liu, Xiangting Kong
Publikováno v:
Journal of Crystal Growth. 240:152-156
High-quality ZnO films have been prepared by using zinc ion implantation into silica followed by post-thermal annealing in oxygen at 700°C for varying lengths of time. The dependence of the structure and photoluminescence of ZnO films on the anneali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd398e3a7a3eaba1e5a809d14a023e78
https://doi.org/10.1016/s0022-0248(02)00843-6
https://doi.org/10.1016/s0022-0248(02)00843-6
Publikováno v:
Solid State Communications. 121:531-536
High quality zinc oxide nanoparticles with (002) preferred orientation were prepared by post-thermal annealing zinc implanted silica at 700 °C using two methods. One method was annealing zinc implanted silica at 700 °C for 2 h in oxygen ambient; th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680149d89a9545eb5df30e1d0183da98
https://doi.org/10.1016/s0038-1098(02)00006-6
https://doi.org/10.1016/s0038-1098(02)00006-6
Autor:
Richard Mu, Leonard C. Feldman, Aloysius F. Hepp, Jerry D. Harris, William E. Buhro, Akira Ueda, Y.S. Tung, Don O. Henderson, E.M. Gordon, M. H. Wu, Ryne P. Raffaelle, Jennifer A. Hollingsworth, M. B. Huang, J. Keay
Publikováno v:
Materials & Design. 22:585-589
Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b8e265d100abe4343b00b76e11d18b
https://doi.org/10.1016/s0261-3069(01)00019-x
https://doi.org/10.1016/s0261-3069(01)00019-x
Publikováno v:
Journal of Physics: Condensed Matter. 13:5535-5544
We report the estimation of diffusion constants for oxygen vacancies in MgO based on optical absorption spectra. MgO single crystals were annealed in a reducing atmosphere (H2 + Ar) to create oxygen vacancies and the samples were annealed in an oxidi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159fc948a96dcf9176b94cf17e97ddd9
https://doi.org/10.1088/0953-8984/13/23/313
https://doi.org/10.1088/0953-8984/13/23/313
Publikováno v:
Physical Review Letters. 83:4586-4589
MeV implantation of gold ions into MgO(100) followed by annealing is a method to form gold nanoparticles for obtaining modified optical properties. We show from variable-energy positron spectroscopy that clusters of 2 Mg and 2 O vacancies (v{sub 4})
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d0c1a8faa76763990a6c4eb2058bd03
https://doi.org/10.1103/physrevlett.83.4586
https://doi.org/10.1103/physrevlett.83.4586
Autor:
John D. Budai, Lynn A. Boatner, E. Sonder, Al Meldrum, R. A. Zuhr, Ian M. Anderson, C. W. White, Don O. Henderson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:957-963
Ion implantation is a versatile tool for the formation of compound semiconductor nanocrystal precipitates in a host medium with the ultimate goal of producing a uniform size distribution of quantum dots for use in optical devices. Ion implantation wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e6e48694e529bae6bd0fe83884d1c52
https://doi.org/10.1016/s0168-583x(98)00727-7
https://doi.org/10.1016/s0168-583x(98)00727-7
Publikováno v:
Materials Chemistry and Physics. 56:140-146
Nanocrystalline BaTiO 3 precursor has been synthesized by using the stearic acid gel (SAG) method. After calcining the precursor at above 600 °C for 0.5 h, nanocrystalline BaTiO 3 powder with cubic perovskite structure is obtained. The powder is com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d702169a63b958b2d9996386549add6
https://doi.org/10.1016/s0254-0584(98)00158-8
https://doi.org/10.1016/s0254-0584(98)00158-8
Autor:
Steven Prawer, R. A. Zuhr, Don O. Henderson, Al Meldrum, E. Sonder, S. P. Withrow, D. M. Hembree, C. W. White, John D. Budai, J. G. Zhu
Publikováno v:
Scopus-Elsevier
Both elemental and compound semiconductor nanocrystals have been formed in insulators by ion beam synthesis. Si nanocrystals in SiO2 give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8eb109cf1f442f58e747867adc89607
https://doi.org/10.1016/s0168-583x(98)00091-3
https://doi.org/10.1016/s0168-583x(98)00091-3
Autor:
C. W. White, Don O. Henderson, Jinli Chen, John D. Budai, Akira Ueda, Richard Mu, Y. S. Tung, R. A. Zuhr, Z. Gu, M. H. Wu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1409-1413
Zinc ion implanted silica with controlled thermal treatments and pulsed laser radiation has been investigated. Optical spectra of the as-implanted silica at higher doses (>3×1016 ions/cm2) and/or the samples annealed in a reducing atmosphere show bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db76d840b7a89aac632085bceed14b5
https://doi.org/10.1116/1.581159
https://doi.org/10.1116/1.581159