Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Don L. Kendall"'
Autor:
Robert A. Shoultz, Don L. Kendall
Publikováno v:
Handbook of Microlithography, Micromachining, and Microfabrication, Volume 2: Micromachining and Microfabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e8803215a9d6c9b10999ca1fb65abe
https://doi.org/10.1117/3.2265071.ch2
https://doi.org/10.1117/3.2265071.ch2
Autor:
Michael Kendall, Miguel Castro-L, Francisco J. De la Hidalga-W, W. Calleja-A, A. Torres-J, Roberto Murphy-A, Don L. Kendall, Ramiro Rodríguez-M, Ignacio Juárez-R, C. Zuniga-I, Elizabeth Meza Prieto, Netzahualcoyotl Carlos-R, Mauro Landa-V
Publikováno v:
ECS Transactions. 13:337-344
A nanowire (NW) device in parallel with a normal nMOSFET is fabricated with a poly-Si planar CMOS process on (5 5 12)Si. With a unit cell of 5.35 nm, this plane has the largest stable atomically flat Si surface. When output current Isd flows from sou
Autor:
P. Rosales-Q, Edmundo A. Gutierrez-D, Don L. Kendall, F. Javier De la Hidalga-W, W. Calleja-A, A. Torres-J
Publikováno v:
ECS Transactions. 6:29-33
In this work, the diffusion mechanisms of both boron and phosphorus dopants are analyzed when they are ion-implanted and thermally activated in high-index silicon substrates. Si(1 1 4) and Si(5 5 12) wafers are reported as highly promising substrates
Autor:
P. Rosales-Q, Edmundo A. Gutierrez-D, Don L. Kendall, F. Javier De la Hidalga-W, W. Calleja-A, A. Torres-J
Publikováno v:
ECS Transactions. 6:21-27
This work reports the measurement of the electron mobility in the inversion layer of MOSFETs fabricated on Si(114) and Si(5 5 12), for medium and high effective transverse electric fields, Eeff. We studied the channel mobility in these surfaces as a
Autor:
Francisco Javier De la Hidalga Wade, Ramiro Rogelio Rodríguez, Pedro Rosales, Don L. Kendall, Wilfrido Calleja Arriaga, Alfonso Torres
Publikováno v:
ECS Transactions. 3:9-14
Even though the MOS technology was developed originally on the (0 0 1)-Si surface, some studies have shown that several MOS parameters can be optimized using other silicon orientations [1-3]. (1 1 4) and (5 5 12) Si surfaces presents a periodical sur
Autor:
Edmundo Gutierrez, W. Calleja, Joel Molina, Alfonso Torres, Carlos Zuniga, Don L. Kendall, Pedro Rosales
Publikováno v:
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices were fabricated on high-index silicon (114) surfaces and their threshold voltage (Vth) and interface-states density (Dit) parameters were both evaluated for the first time. Even thoug
Autor:
Don L. Kendall
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3598-3605
A new model for the anisotropic etching of Si predicts a maximum dissolution rate at 22 wt. % KOH:H2 O and a zero etch rate at the solubility limit of KOH in H2 O, which is in good agreement with experiments on {100} and {110} Si. However, the {111}
Publisher Summary This chapter discusses critical technologies for the micromachining of silicon. “Micromachining” is a term generally applied to the wide range of three-dimensional (3-D) structures that can be fabricated using techniques origina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b88cae53567c925e74a277acd7473c
https://doi.org/10.1016/s0080-8784(08)62519-3
https://doi.org/10.1016/s0080-8784(08)62519-3
Autor:
Miguel Castro-L, F. Javier De la Hidalga-W, Pedro Rosales-Q, Alfonso Torres-J, Wilfrido Calleja-A, Edmundo Gutierrez-D, Don L. Kendall
Publikováno v:
ECS Meeting Abstracts. :16-16
not Available.
Autor:
Miguel Castro-L, F. Javier De la Hidalga-W, Pedro Rosales-Q, Alfonso Torres-J, Wilfrido Calleja-A, Edmundo Gutierrez-D, Don L. Kendall
Publikováno v:
ECS Meeting Abstracts. :17-17
not Available.