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Autor:
N.H. Yang, Jeffrey M. Lauerhaas, Wesley Yu, Euing Lin, Ted Ming-Lang Guo, Don Kahaian, J.Y. Wu, J.F. Lin, Jeffery W. Butterbaugh, Chin-Cheng Chien, Anthony S. Ratkovich
Publikováno v:
Solid State Phenomena. 219:97-100
A single wafer silicon nitride (SiN) selective etch process with an etch rate greater than 80A/min of low-pressure chemical vapor deposited (LPCVD) SiN has been developed. Previous work with a similar single wafer system utilized a mixture of sulfuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85619a9a57f6ee7206b7d8b6668d801
https://doi.org/10.4028/www.scientific.net/ssp.219.97
https://doi.org/10.4028/www.scientific.net/ssp.219.97
