Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Don Hofer"'
Autor:
Debra Fenzel-Alexander, Don Hofer, Hiroshi Ito, Greg Breyta, Pete Hagerty, R. A. Dipietro, Ron Nunes, Will Conley, Jim Thackeray, S. Holmes
Publikováno v:
Journal of Photopolymer Science and Technology. 9:557-572
A production-worthy deep UV resist system built on the ESCAP platform is described. The resist consists of a thermally and hydrolytically stable resin and acid generator and thus can be heated at high temperatures forfree volume reduction, which prov
Publikováno v:
Journal of Photopolymer Science and Technology. 8:505-518
Contamination of chemical amplification resists by airborne basic substances can be minimized by reducing the free volume of resist films by annealing. Good annealing requires heating the resist films above their glass transition temperatures. Howeve
Publikováno v:
Journal of Photopolymer Science and Technology. 7:433-447
Publikováno v:
ACS Symposium Series ISBN: 9780841233775
Irradiation of Polymers: Fundamentals and Technological Applications
Irradiation of Polymers: Fundamentals and Technological Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df38c5642492cc64a9c75d4446c80e4
https://doi.org/10.1021/bk-1996-0620.ch030
https://doi.org/10.1021/bk-1996-0620.ch030
Autor:
William D. Hinsberg, Thomas P. Russell, Alfred F. Renaldo, C. Grant Willson, Don Hofer, Dennis R. McKean
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:3000
The development of a positive, thick film photoresist consisting of a diazonaphthoquinone sensitizer and a novolac resin is described which has the capability of meeting a wide range of thick film requirements necessary for magnetic recording head fa
Autor:
David E. Seeger, Gregory Breyta, Don Hofer, Hiroshi Ito, Karen Petrillo, Edward D. Babich, Andrew Pomerene
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3863
A positive tone chemically amplified photoresist was evaluated for use on a 0.44 NA 248 nm excimer laser stepper. The effects of various formulation changes were examined with respect to exposure latitude, depth of focus, resolution, and bias between
Publikováno v:
Journal of Polymer Science: Polymer Letters Edition. 21:823-829
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