X-Ray Photoelectron Spectroscopy Estimation of Cobalt Seed Layer Reactivity Toward Air Exposure: A Challenge?

Autor: Amine Lakhdari, Vincent Mevellec, Arnaud Etcheberry, Mikailou Thiam, Dominique Suhr, Nathalie Simon, Anne-Marie Goncalves, Frédéric Raynal, Louis Caillard, Mathieu Frégnaux

Publikováno v: ECS Transactions
237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020, 2020, Montreal, Canada. pp.149-156, ⟨10.1149/09701.0149ecst⟩

For the last several generations of CMOS technology, copper has been used widely as an interconnect material in the back end of the line (BEOL). [1] [2] [3] As the current nodes technology are decreasing continuously, several copper scaling challenge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82283a0f550fcc1962cf68ca0096e2df
https://doi.org/10.1149/09701.0149ecst

Conformational Plasticity of Hydrogen Bonded Bis-urea Supramolecular Polymers

Autor: Dominique Suhr, Carine Guyard-Duhayon, Laurent Bouteiller, Benjamin Isare, Roberto Lazzaroni, Bruno Andrioletti, Régis Guillot, Mathieu Linares, Patrick Brocorens

Publikováno v: Journal of Physical Chemistry B
Journal of Physical Chemistry B, 2013, 117 (17), pp.5379-5386. ⟨10.1021/jp401915y⟩
Journal of Physical Chemistry B, American Chemical Society, 2013, 117 (17), pp.5379-5386. ⟨10.1021/jp401915y⟩

1520-6106; We report a detailed structural investigation of supramolecular polymers formed by hydrogen bonded self-assembly of bis-urea monomers. The careful exploration of the energy landscape by molecular mechanics/molecular dynamics (MM/MD) simula

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db1ff90bc9b90638e196c08d888550a0
https://doi.org/10.1021/jp401915y

A novel bottom up fill mechanism for the metallization of advanced node copper interconnects

Autor: Paul Blondeau, Jean-Baptiste Chaumont, Mikailou Thiam, Frédéric Raynal, Dominique Suhr, Vincent Mevellec, Laurianne Religieux

Publikováno v: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Copper electrodeposition for on-chip interconnection has been widely described in the semiconductor industry. Most copper plating chemistries currently used for copper interconnects are acidic, involving special additives that provide bottom up fill

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::806d408ae5230c8b4ca2d386f9c21a14
https://doi.org/10.1109/iitc-amc.2016.7507725

Through Silicon Via metallization: A novel approach for insulation/barrier/copper seed layer deposition based on wet electrografting and chemical grafting technologies

Autor: Frédéric Raynal, Isabelle Bispo, Steve Lerner, Claudio Truzzi, Vincent Mevellec, Dominique Suhr, Jose Gonzalez

Publikováno v: Materials Research Society Symposium Proceedings.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21918b2be2ebc107e68e3d9b7ff22de1
https://doi.org/10.1557/proc-1112-e06-05

Electrografted Copper Seed Layer for High Aspect Ratio TSVs Interposer Metallization

Autor: Frédéric Gaillard, Thierry Mourier, Laurent Vandroux, Laurianne Religieux, Dominique Suhr, Frédéric Raynal, Vincent Mevellec

Publikováno v: ECS Meeting Abstracts. :1690-1690

After many years of developments, 3D Integrated Circuits have emerged as a potential key enabler for maintaining semiconductor performance trends. Through Silicon Vias (TSVs) sit at the foundation of the 3D-IC revolution for extending semiconductor i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f0e45d7062e8cb818dd63447bc80864
https://doi.org/10.1149/ma2014-02/33/1690