STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−xBx

Autor: Géraldine Hallais, Gilles Patriarche, Léonard Desvignes, Dominique Débarre, Francesca Chiodi

Publikováno v: Semiconductor Science and Technology. 38:034003

We report on the structural properties of highly B-doped silicon (up to 10 at.% of active doping) realised by nanosecond laser doping. The crystalline quality, lattice deformation and B distribution profile of the doped layer are investigated by scan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::489f2c9d5d5694d725dd67c8beb77357
https://doi.org/10.1088/1361-6641/acb0f0

Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions

Autor: F. Lefloch, F. Chiodi, Dominique Débarre, Christophe Marcenat, J. E. Duvauchelle

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (2), ⟨10.1103/PhysRevB.96.024503⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 96 (2), ⟨10.1103/PhysRevB.96.024503⟩

We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c6ff8183da8b5e1a7d5a14ca220ab8f
https://hal.science/hal-01986248

Optical and electrical properties of laser doped Si:B in the alloy range

Autor: Jacques Boulmer, Dominique Débarre, T. Kociniewski, A. Bhaduri, Frédéric Fossard

Publikováno v: Applied Surface Science. 258:9228-9232

We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5 × 10 21 cm −3 by ste

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca512cdc736dd998882981b803e9bfbc
https://doi.org/10.1016/j.apsusc.2011.10.077

Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror

Autor: Davide Cammilleri, Daniel Bouchier, C. Tran Manh, Dominique Débarre, N. Yam, Frédéric Fossard, Mathieu Halbwax, Jacques Boulmer

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
Thin Solid Films, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩

The use of Ge nanostructures in microelectronic devices requires quite low thermal budget processes. In this paper, we report on the development of a technique which enables the localization of laser thermal annealing. Dielectric layers have been dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a870a2f78f09a4477a61bc6d8b9855c
https://doi.org/10.1016/j.tsf.2008.08.147

Silicon superconducting quantum interference device

Autor: Klaus Hasselbach, Dominique Débarre, J. E. Duvauchelle, Christophe Marcenat, John R. Kirtley, F. Chiodi, Anaïs Francheteau, F. Lefloch

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩
Applied Physics Letters, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d34663126299a04192a8b844e3e280da
https://hal.archives-ouvertes.fr/hal-01590246