Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Dominique Ballutaud"'
Autor:
E. Francke, M. Nickravech, Jacques Amouroux, Daniel Morvan, Dominique Ballutaud, M. Benmansour
Publikováno v:
Proceeding of Progress in Plasma Processing of Materials, 2003.
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2010, 519, pp.1325-1333. ⟨10.1016/j.tsf.2010.09.036⟩
Thin Solid Films, Elsevier, 2010, 519, pp.1325-1333. ⟨10.1016/j.tsf.2010.09.036⟩
We present an overview of the properties of silicon oxynitride material (SiON) deposited by plasma enhanced chemical vapor deposition (PECVD) for photovoltaic applications. SiON films were deposited using silane (SiH4), ammonia (NH3) and nitrogen pro
Publikováno v:
Thin Solid Films. 517:6358-6363
In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventi
Autor:
Dominique Ballutaud, Nathalie Simon, Arnaud Etcheberry, Anne-Marie Goncalves, Claudia Decorse-Pascanut, Gaëlle Charrier
Publikováno v:
Diamond and Related Materials. 18:890-894
In the present work, two different nitrogenation of diamond surface were studied onto moderately doped BDD samples (10 19 at cm − 3 ). The effects of an electrochemical treatment in liquid ammonia have been compared to those produced by NH 3 /N 2 p
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2008, pp.6954-6958. ⟨10.1016/j.tsf.2007.12.026⟩
Thin Solid Films, Elsevier, 2008, pp.6954-6958. ⟨10.1016/j.tsf.2007.12.026⟩
International audience; Hydrogenated silicon oxynitride (SiON) could be used in combination with silicon nitride (SiN) to create multi-layer antireflection coatings for silicon solar cells. It could also be used as a passivation layer, especially on
Autor:
Stéphane Fusil, Manuel Bibes, Isabelle Devos, D. Imhoff, Jean-Luc Maurice, Agnès Barthélémy, Karim Bouzehouane, B. Domengès, Cyrile Deranlot, Eric Jacquet, Gervasi Herranz, D.-G. Crété, Dominique Ballutaud, G. Gachet, C. Carrétéro, Marie-José Casanove
Publikováno v:
Materials Science and Engineering: B. 144:1-6
Some interfaces in semiconductors or insulators structurally cause a valence mismatch, which leads to a two-dimensional space charge that must be balanced by localised or mobile charge carriers. Screening by mobile electrons presents a lot of theoret
Autor:
C. Saguy, C. Cytermann, J. Chevallier, François Jomard, B. Philosoph, Dominique Ballutaud, Rafi Kalish, T. Kociniewski, C. Baron, Alain Deneuville
Publikováno v:
Diamond and Related Materials. 16:1459-1462
The p-to-n-type conversion of particular B-doped homoepitaxially grown diamond layers upon deuterium plasma treatment was discovered three years ago. However, many questions regarding the reproducibility of the effect for samples of different origins
Autor:
Dominique Ballutaud, Arnaud Etcheberry, E. de La Rochefoucauld, Nathalie Simon, Hugues A. Girard
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2007, 16 (4-7), pp.888-891. ⟨10.1016/j.diamond.2006.12.002⟩
Diamond and Related Materials, 2007, 16 (4-7), pp.888-891. ⟨10.1016/j.diamond.2006.12.002⟩
Diamond and Related Materials, Elsevier, 2007, 16 (4-7), pp.888-891. ⟨10.1016/j.diamond.2006.12.002⟩
Diamond and Related Materials, 2007, 16 (4-7), pp.888-891. ⟨10.1016/j.diamond.2006.12.002⟩
The electrochemical behaviour of as-deposited and anodically treated samples is studied by cyclic voltammetry in the presence of redox couple (Ce 4+ /Ce 3+ ). Two kinds of anodic pre-treatments are performed, playing on the current density and on the
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 11:297-308
Publikováno v:
Solar Energy Materials and Solar Cells. 91:195-200
Hydrogenation by plasma is a low cost and efficient method to improve the photovoltaic properties of multicrystalline silicon. The role of plasma parameters on the efficiency of hydrogenation was studied using secondary ion mass spectrometry (SIMS),