Zobrazeno 1 - 10
of 229
pro vyhledávání: '"Dominique, Drouin"'
Autor:
Raphaël Dawant, Matthieu Gaudreau, Marc-Antoine Roy, Pierre-Antoine Mouny, Matthieu Valdenaire, Pierre Gliech, Javier Arias Zapata, Malek Zegaoui, Fabien Alibart, Dominique Drouin, Serge Ecoffey
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100251- (2024)
In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1]. Characterized by their unique resistive switching
Externí odkaz:
https://doaj.org/article/623ddebe051d45268b491943aaff42f6
Autor:
Kamila Janzakova, Ismael Balafrej, Ankush Kumar, Nikhil Garg, Corentin Scholaert, Jean Rouat, Dominique Drouin, Yannick Coffinier, Sébastien Pecqueur, Fabien Alibart
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Neural networks are powerful tools for solving complex problems, but finding the right network topology for a given task remains an open question. Biology uses neurogenesis and structural plasticity to solve this problem. Advanced neural net
Externí odkaz:
https://doaj.org/article/b5eab42ae8994ee7b74e7112375ea0e7
Autor:
Henri Boulanger, MD, Stéphane Bounan, MD, Amel Mahdhi, MD, Dominique Drouin, MD, Salima Ahriz-Saksi, MD, Fabien Guimiot, PhD, Nathalie Rouas-Freiss, PD, PhD
Publikováno v:
AJOG Global Reports, Vol 4, Iss 1, Pp 100321- (2024)
Preeclampsia is a syndrome with multiple etiologies. The diagnosis can be made without proteinuria in the presence of dysfunction of at least 1 organ associated with hypertension. The common pathophysiological pathway includes endothelial cell activa
Externí odkaz:
https://doaj.org/article/922948ed5815403f8ef167526f5e5233
Publikováno v:
Sensors, Vol 24, Iss 10, p 3020 (2024)
In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it
Externí odkaz:
https://doaj.org/article/bb792dcb7daf4762a19330248dba9a1f
Autor:
Victor Yon, Bastien Galaup, Claude Rohrbacher, Joffrey Rivard, Clément Godfrin, Ruoyu Li, Stefan Kubicek, Kristiaan De Greve, Louis Gaudreau, Eva Dupont-Ferrier, Yann Beilliard, Roger G Melko, Dominique Drouin
Publikováno v:
Machine Learning: Science and Technology, Vol 5, Iss 4, p 045034 (2024)
This study presents a machine learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploi
Externí odkaz:
https://doaj.org/article/10d2de8644b04d7c856861808b543b37
Autor:
Nikhil Garg, Ismael Balafrej, Terrence C. Stewart, Jean-Michel Portal, Marc Bocquet, Damien Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, Fabien Alibart
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
This study proposes voltage-dependent-synaptic plasticity (VDSP), a novel brain-inspired unsupervised local learning rule for the online implementation of Hebb’s plasticity mechanism on neuromorphic hardware. The proposed VDSP learning rule updates
Externí odkaz:
https://doaj.org/article/efbbc052db78470eb28c89db261f7e95
Autor:
Victor Yon, Amirali Amirsoleimani, Fabien Alibart, Roger G. Melko, Dominique Drouin, Yann Beilliard
Publikováno v:
Frontiers in Electronics, Vol 3 (2022)
Novel computing architectures based on resistive switching memories (also known as memristors or RRAMs) have been shown to be promising approaches for tackling the energy inefficiency of deep learning and spiking neural networks. However, resistive s
Externí odkaz:
https://doaj.org/article/c2d94ee91ac64b69be730a9ee34cc93c
Autor:
Gaspard Goupy, Alexandre Juneau-Fecteau, Nikhil Garg, Ismael Balafrej, Fabien Alibart, Luc Frechette, Dominique Drouin, Yann Beilliard
Publikováno v:
Neuromorphic Computing and Engineering, Vol 3, Iss 1, p 014001 (2023)
Spiking neural networks (SNNs) are gaining attention due to their energy-efficient computing ability, making them relevant for implementation on low-power neuromorphic hardware. Their biological plausibility has permitted them to benefit from unsuper
Externí odkaz:
https://doaj.org/article/7f6d039ce24842debf21418e3b5f4caa
Autor:
Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-12 (2019)
The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drasti
Externí odkaz:
https://doaj.org/article/57278417d6d941dab4b3cabca1cba26b
Autor:
Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladrière, Dominique Drouin
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2023, 70 (4), pp.1989-1995. ⟨10.1109/TED.2023.3244133⟩
IEEE Transactions on Electron Devices, 2023, 70 (4), pp.1989-1995. ⟨10.1109/TED.2023.3244133⟩
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f35cfea04bfbf2d0a02133746a79ac64
https://doi.org/10.1109/ted.2023.3244133
https://doi.org/10.1109/ted.2023.3244133