Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Dominik Nehmer"'
Publikováno v:
Energies, Vol 17, Iss 17, p 4362 (2024)
This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three G
Externí odkaz:
https://doaj.org/article/eb39731954f741348e3c3a11b0c4300c
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 293-305 (2023)
This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has bee
Externí odkaz:
https://doaj.org/article/767163386ca842d9a8ce2fbfd6ccc4ef