Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Dominik Kasprowicz"'
Autor:
Maria Hayder, Dominik Kasprowicz
Publikováno v:
Electronics, Vol 10, Iss 3181, p 3181 (2021)
Electronics; Volume 10; Issue 24; Pages: 3181
Electronics; Volume 10; Issue 24; Pages: 3181
Plagiarism of integrated-circuit (IC) layout is a problem encountered both in academia and in industry. A procedure was proposed that compares IC layouts based on the physical representation of particular electrical nets, i.e., on the shape of the fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6b2cc5dad0e09335a7860901b17c51d
https://www.mdpi.com/2079-9292/10/24/3181
https://www.mdpi.com/2079-9292/10/24/3181
Autor:
Dominik Kasprowicz
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 38:1493-1500
Table-based models of semiconductor devices are an attractive solution if a physics-based analytical model of the device cannot be found or has insufficient accuracy. Moreover, table-based models offer easy tradeoff between evaluation speed and accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af7f099b0e59f4b1e97b8657d4fe3c4
https://doi.org/10.1109/tcad.2018.2852756
https://doi.org/10.1109/tcad.2018.2852756
Autor:
Dominik Kasprowicz
Publikováno v:
MIXDES
The paper presents a method for extracting the physical parameters of a semiconductor device based on the measurements of its electrical response (e.g. transfer characteristics) combined with simulation. Such extraction is usually performed by an opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e20ef894e98024782535f7e8d99403e
https://doi.org/10.23919/mixdes.2019.8787195
https://doi.org/10.23919/mixdes.2019.8787195
Publikováno v:
Journal of Physics: Conference Series. 1534:012004
The article proposes a method for producing interdigitated electrodes structures on a flexible composite substrate in the physical vacuum deposition process. Ag and Au with a purity of 99.99% were used as deposited metals. The results of impedance me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::936d58b5f9a7461a36908eafc5082bff
https://doi.org/10.1088/1742-6596/1534/1/012004
https://doi.org/10.1088/1742-6596/1534/1/012004
Autor:
Dominik Kasprowicz
Publikováno v:
MIXDES
This paper presents a variability-aware table-based model of a transistor. It is shown to accurately capture its transfer curves in the presence of multiple geometry variations. The model has been successfully applied to the VeSFET — a transistor w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d461998fc255e3ee9b276283776f2a
https://doi.org/10.23919/mixdes.2017.8005173
https://doi.org/10.23919/mixdes.2017.8005173
Autor:
Dominik Kasprowicz, Hilekaan Wada
Publikováno v:
Microelectronics Journal. 45:1212-1219
Student projects have always been plagued by plagiarism. Integrated-circuit (IC) design courses are no exception. Since layout is considered the most laborious part of circuit design, it is common for students to reuse their colleagues׳ work with so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7452740ba98ed1281a0eb4dbcfe1fcfb
https://doi.org/10.1016/j.mejo.2014.04.023
https://doi.org/10.1016/j.mejo.2014.04.023
Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
We present a simple small-signal parameterized equivalent circuit for HgCdTe photodetectors operating at high temperatures in the middle and long wavelength of the infrared spectrum. This circuit is capable of accurate modeling the impedance of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491bb6e1d96a449b9989b7b71535fb89
https://doi.org/10.1109/mikon.2016.7492080
https://doi.org/10.1109/mikon.2016.7492080
Autor:
Dominik Kasprowicz
Publikováno v:
MIXDES
This paper presents a semi-empirical model of the mobile charge in the channel of a junctionless dual-gate MOSFET. Its accuracy has been demonstrated to be better than 1% of the total depletion charge for a wide range of channel thickness and substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e9c87cccbe0a20f87721151bfdaaa7
https://doi.org/10.1109/mixdes.2015.7208513
https://doi.org/10.1109/mixdes.2015.7208513
Autor:
Witold A. Pleskacz, Dominik Kasprowicz
Publikováno v:
Microelectronics Reliability. 43:945-953
The systematic decrease in the minimum feature size in VLSI circuits makes spot defects an increasingly significant cause of ICs’ faults. A testing method optimized for detecting faults of this origin has been recently developed. This method, calle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df6f202d21136f0a89380d2bd0cbaef3
https://doi.org/10.1016/s0026-2714(03)00092-1
https://doi.org/10.1016/s0026-2714(03)00092-1
Autor:
G. Q. Lo, Aashit Kamath, Wojciech Maly, Nansheng Shen, Zhixian Chen, Dim-Lee Kwong, Dominik Kasprowicz, Andrzej Pfitzner, Navab Singh
Publikováno v:
IEEE Electron Device Letters. 33:152-154
This letter experimentally demonstrates and and or functionalities with a single MOS transistor. Device architecture and fabrication follow the recent work on fabrication-based feasibility assessment of junctionless vertical-slit field-effect transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce22486cf7a67b22984116b50dc9def
https://doi.org/10.1109/led.2011.2176309
https://doi.org/10.1109/led.2011.2176309