Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications

Autor: Dominijanni, D., Giovine, E., Notargiacomo, A., Pantellini, A., Romanini, P., Peroni, M., Nanni, A.

Publikováno v: In Microelectronic Engineering August 2011 88(8):1927-1930

Hydrogen terminated diamond MESFETs: new technology for RF power applications

Autor: Paolo Calvani, Conte, G., Dominijanni, D., Giovine, E., Pasciuto, B., Limiti, E.

Publikováno v: Scopus-Elsevier
IEEE 5th European Microwave Integrated Circuits Conference, pp. 122–125, Paris, FRANCE, SEP 26-OCT 01, 2010
info:cnr-pdr/source/autori:P. Calvani (1), G. Conte (1), D. Dominijanni (2), E. Giovine (2), B. Pasciuto (3), E. Limiti (3)/congresso_nome:IEEE 5th European Microwave Integrated Circuits Conference/congresso_luogo:Paris, FRANCE/congresso_data:SEP 26-OCT 01, 2010/anno:2010/pagina_da:122/pagina_a:125/intervallo_pagine:122–125
Conference on European Microwave Week Connecting the World, pp. 122–125, Paris, FRANCE, 26/09-01/10/2010
info:cnr-pdr/source/autori:Calvani, P.; Conte, G.; Dominijanni, D.; Giovine, E.; Pasciuto, B.; Limiti, E./congresso_nome:Conference on European Microwave Week Connecting the World/congresso_luogo:Paris, FRANCE/congresso_data:26%2F09-01%2F10%2F2010/anno:2010/pagina_da:122/pagina_a:125/intervallo_pagine:122–125

Metal-Semiconductor Field Effect Transistors (MESFETs) are fabricated on hydrogen terminated chemical vapour deposited diamond substrate with sub-micron gate length. Ohmic contacts and passivation technologies are optimized for power applications. DC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8ba279a231a2f98d16e5203754cb4955
http://hdl.handle.net/2108/13595

Scalable gate two EBL steps fabrication process for optimal high frequency GaN HEMT performances

Autor: Peroni, M, Nanni, A, Costrini, C, Dominijanni, D, Giovine, E, Limiti, E, Ciccognani, W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3667::d5871a95013cdf757f13a44f3eea6563
http://hdl.handle.net/2108/19157

Low noise performance of scalable sub-quarter micron GaN HEMT with field plate technology

Autor: Peroni, M., Nanni, A., Romanin, P., Dominijanni, D., Notargiacomo, A., Giovine, E., Ciccognani, W., Colangeli, S.

Publikováno v: 6th European Microwave Integrated Circuits Conference EuMIC, pp. 344–347, Manchester, UK, 10-11 October 2011
info:cnr-pdr/source/autori:Peroni, M. ; Nanni, A. ; Romanin, P. ; Dominijanni, D. ; Notargiacomo, A. ; Giovine, E. ; Ciccognani, W. ; Colangeli, S./congresso_nome:6th European Microwave Integrated Circuits Conference EuMIC/congresso_luogo:Manchester, UK/congresso_data:10-11 October 2011/anno:2011/pagina_da:344/pagina_a:347/intervallo_pagine:344–347

In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::09ac01335ebda468c08d8680d5213b59
https://publications.cnr.it/doc/319109

RF Power Performance Evaluation of Surface Channel Diamond MESFET.

Autor: Rossi, M. C., Calvani, P., Conte, G., Camarchia, V., Cappelluti, F., Ghione, G., Pasciuto, B., Limiti, E., Dominijanni, D., Giovine, E.

Publikováno v: MRS Online Proceedings Library; 2009, Vol. 1203 Issue 1, p1-6, 6p