Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Dominic J. F. Fulgoni"'
Autor:
Stephen M. Thomas, Marti J. Prest, Dominic J. F. Fulgoni, Adam R. Bacon, Tim J. Grasby, David R. Leadley, Evan H. C. Parker, Terence E. Whall
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is
Externí odkaz:
https://doaj.org/article/4f6f9284b457492fba919694b43cc5ad
Autor:
Gerard J. Bauhuis, Peter Mulder, Erik J. Haverkamp, John J. Schermer, Lee J. Nash, Dominic J. F. Fulgoni, Ian M. Ballard, Geoffrey Duggan, Andreas W. Bett, Robert D. McConnell, Gabriel Sala, Frank Dimroth
Publikováno v:
AIP Conference Proceedings.
The epitaxial lift‐off (ELO) technique has been combined with inverted III–V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8b2fdb8aa0234adbf15ac7194bd678
https://doi.org/10.1063/1.3509181
https://doi.org/10.1063/1.3509181