Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Domenica Visalli"'
Publikováno v:
ECS Transactions. 50:173-176
The optimization of the crystal growth of the GaN buffer, and more in general of the III-nitride epilayers, cannot be exclusively done at material level through crystalline measurements. As a matter of fact, device parameters such as current density,
Autor:
Marleen Van Hove, Ahn Puc Duc Nguyen, Hugo Bender, Domenica Visalli, Gustaaf Borghs, Paola Favia, Andre Stesmans, Maarten Leys, Eddy Simoen
Publikováno v:
physica status solidi (a). 209:1851-1856
A combined deep-level transient spectroscopy (DLTS) and electron spin resonance (ESR) study is performed to identify the electrically active defects at the AlN/Si (111) interface. It is shown that the density of deep-level states not only depends on
Autor:
Gustaaf Borghs, Karen Geens, Erwin Vandenplas, Denis Marcon, Xuanwu Kang, B. Sijmus, J. Viaene, Domenica Visalli, Kai Cheng, Maarten Leys, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere
Publikováno v:
ECS Transactions. 41:101-112
This work provides an overview of our GaN-on-Si activity for high voltage applications. We will discuss the failure mechanisms of GaN-on-Si devices by electrical characterization and TCAD simulations. The main issues of the use of the Si as substrate
Autor:
Denis Marcon, Stefan Degroote, Kai Cheng, M. Van Hove, Puneet Srivastava, Maarten Leys, Marianne Germain, Gustaaf Borghs, Joff Derluyn, Erwin Vandenplas, Domenica Visalli, J. Das
Publikováno v:
IEEE Transactions on Electron Devices. 57:3333-3339
We investigated the limitations of the field plate (FP) effect on breakdown voltage VBD that is due to the silicon substrate in AlGaN/GaN/AlGaN double heterostructures field-effect transistors. In our previous work, we showed that in devices with lar
Autor:
Puneet Srivastava, Stefaan Decoutere, M. Van Hove, Kai Cheng, Jordi Everts, J. Das, Maarten Leys, J. Van den Keybus, Denis Marcon, Gustaaf Borghs, Domenica Visalli, Johan Driesen
Publikováno v:
IEEE Electron Device Letters, 32(10), 1370-1372. Institute of Electrical and Electronics Engineers
III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-conv
Autor:
J. Das, Domenica Visalli, Stefaan Decoutere, Marleen Van Hove, Pawel E. Malinowski, Gustaaf Borghs, Puneet Srivastava, Karen Geens, Robert Mertens, Denis Marcon, Kai Cheng, Maarten Leys
Publikováno v:
physica status solidi c. 8:2216-2218
In this paper, we present a study on the substrate removal of AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) on Si (111) substrates by 2 different approaches: a global versus local removal route. We report on the significant enhancement of brea
Autor:
Silvia Lenci, Marleen Van Hove, J. Das, Robert Mertens, Stefaan Decoutere, Pawel E. Malinowski, Gustaaf Borghs, Kai Cheng, Maarten Leys, Puneet Srivastava, Domenica Visalli, Denis Marcon, Karen Geens
Publikováno v:
IEEE Electron Device Letters. 32:30-32
In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage (VBD) of AlGaN/GaN/AlGaN double heterostructure FETs on
Autor:
Denis Marcon, Joff Derluyn, Stefaan Decoutere, Marleen Van Hove, Robert Mertens, Stefan Degroote, Marianne Germain, Karen Geens, J. Das, Domenica Visalli, Pawel E. Malinowski, Gustaaf Borghs, Kai Cheng, Maarten Leys, Puneet Srivastava
Publikováno v:
IEEE Electron Device Letters. 31:851-853
In this letter, we present a novel approach to enhance the breakdown voltage (VBD) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by metal-organic chemical vapor deposition on Si (111) substrates through a silicon-substrate-removal a
Autor:
Joff Derluyn, Farid Medjdoub, Stefan Degroote, Kai Cheng, Maarten Leys, Denis Marcon, Gustaaf Borghs, Domenica Visalli, Marianne Germain, M. Van Hove
Publikováno v:
IEEE Electron Device Letters. 31:111-113
Ultrathin-barrier normally off AlN/GaN/AlGaN double-heterostructure field-effect transistors using an in situ SiN cap layer have been fabricated on 100-mm Si substrates for the first time. The high 2DEG density in combination with an extremely thin b
Autor:
Gaudenzio Meneghesso, Oliver Hilt, Rimma Zhytnytska, Joachim Würfl, Sergey Bychikhin, Enrico Zanoni, Mattia Cappriotti, Clément Fleury, Joff Derluyn, Dionyz Pogany, Gottfried Strasser, Domenica Visalli
Publikováno v:
Microelectronics Reliability
We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage V BD values shows mostly a bimodal distribution th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfdc11c2ddfd1b4a568753f6b116aed9
http://hdl.handle.net/11577/2693094
http://hdl.handle.net/11577/2693094