Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Domagoj Siprak"'
Publikováno v:
IET Circuits, Devices & Systems. 3:340-349
This study compares the key parameters of two integrated receiver front-end architectures: low noise amplifier (LNA) with active mixer against LNA with passive mixer. The authors discuss the differences in the performance and their impact on system c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28ebdd767a31e88f97eaf0393099ff3
https://doi.org/10.1049/iet-cds.2009.0134
https://doi.org/10.1049/iet-cds.2009.0134
Autor:
Peter Baumgartner, Domagoj Siprak, Enrico Sangiorgi, Nicola Zanolla, Marc Tiebout, Claudio Fiegna
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated to the capture and emission of charge carriers by a single trap located in the gate dielectric. RTS noise degrades the performance of analog, digital,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8c1b02dccf53c6078075880f87b74ab
http://hdl.handle.net/11585/89478
http://hdl.handle.net/11585/89478
Autor:
Morin Dehan, Jesenka Veledar Kruger, Stefaan Decoutere, Piet Wambacq, Michael Fulde, Abdelkarim Mercha, Domagoj Siprak, Bertrand Parvais
Publikováno v:
ESSCIRC
A FinFET VCO and a differential LNA operating at 17 GHz are presented. The LNA contains on-chip input and output baluns, the input balun for the conversion of the single-ended antenna signal, and it achieves a gain of 9.4 dB and a noise figure of 6.6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2d82a606103d7534cd22d7ba0c7d9f9
https://hdl.handle.net/20.500.14017/880603ff-5e95-4581-a138-30432f124813
https://hdl.handle.net/20.500.14017/880603ff-5e95-4581-a138-30432f124813
A new concept of noise reduction in CMOS circuits is presented taking advantage of a strong reduction of MOSFET low-frequency noise occurring under switched gate bias conditions and forward substrate bias. The effect of forward substrate bias on nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff82952f5d3b725954fb505673ffe404
http://hdl.handle.net/11585/87609
http://hdl.handle.net/11585/87609
Autor:
Enrico Sangiorgi, Domagoj Siprak, Nicola Zanolla, Peter Baumgartner, Marc Tiebout, Claudio Fiegna
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments. Our results show that by applying a forward substrate bias to a MOSFET periodically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dde73c6b3e2184df9005ff6b789cc606
https://doi.org/10.1109/icsict.2008.4734476
https://doi.org/10.1109/icsict.2008.4734476
Publikováno v:
ESSCIRC
A reduction of close to carrier phase noise of a 14 GHz PMOS VCO is presented by forward substrate biasing the MOSFETs providing the oscillation in the VCO. This finding is explained by the physical effect of significantly reduced 1/f noise in transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ac8438f6c4d0a872c3f1b1537acb3f
https://doi.org/10.1109/esscirc.2008.4681858
https://doi.org/10.1109/esscirc.2008.4681858
Autor:
J.W. Kunze, Marc Tiebout, Josef Hausner, C. Weyers, Daniel Kehrer, U. Langmann, Pierre Mayr, Domagoj Siprak
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium.
This paper presents novel MOS-transistor layouts for analog RF applications. Asymmetrical drain and source diffusion areas as well as their contacting metal stacks are adjusted to improve the transistor performance. These modifications allow for incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::add6df093be449a154aed550996ccc1f
https://doi.org/10.1109/rfic.2008.4561500
https://doi.org/10.1109/rfic.2008.4561500
Publikováno v:
2008 9th International Conference on Ultimate Integration of Silicon.
Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fb37955f247ab3d7748eb3af5acae96
https://doi.org/10.1109/ulis.2008.4527158
https://doi.org/10.1109/ulis.2008.4527158
A strong reduction of MOSFET low-frequency noise under switched gate bias conditions is observed for forward substrate bias. The effect of forward substrate bias is significantly larger in switched compared to constant gate bias conditions. Experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b7a8c05b6b68b2fe00ee77510b44cc9
http://hdl.handle.net/11585/62207
http://hdl.handle.net/11585/62207
Autor:
Domagoj Siprak, Weize Xiong, Florian Bauer, C. Russ, Christian Pacha, Andrew Marshall, C.R. Cleavelin, G. Knoblinger, Doris Schmitt-Landsiedel, Klaus Von Arnim, M. Fulde, Klaus Schruefer
Publikováno v:
ICECS
In this paper recent advances in multi-gate MOSFET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC applications and large scale integration capability is shown. Excellent short channel control enables
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19545913ee8c7f4adacd2c14e55b0ed7
https://doi.org/10.1109/icecs.2007.4510961
https://doi.org/10.1109/icecs.2007.4510961