Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Dolores A. Black"'
Autor:
Dolores A. Black, Matthew J. Marinella, Jeffrey D. Black, Micahel Skoufis, Luis Bustamante, Heather Quinn, Hugh J. Barnaby, Matthew Breeding, Sapan Agarwal, Ben Feinberg, Michael Lee McLain, Lawrence T. Clark, John Brunhaver, Arun Rodrigues, Matthew Cannon
Publikováno v:
IEEE Transactions on Nuclear Science. 68:980-990
Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7149a3a602311ef3c92ec8adf98bb1
https://doi.org/10.1109/tns.2021.3071653
https://doi.org/10.1109/tns.2021.3071653
Autor:
Robert A. Reed, James M. Trippe, Robert A. Weller, Patrick J. Griffin, R. Nathan Nowlin, Dolores A. Black, Jeffrey D. Black, Joseph G. Salas, Paul E. Dodd, Nicholas A. Domme, Ronald D. Schrimpf, Andrew M. Tonigan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1125-1132
Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27457803210cbb02208088d1c0d3521b
https://doi.org/10.1109/tns.2020.2973569
https://doi.org/10.1109/tns.2020.2973569
Autor:
Jeffrey S. George, Ning Xu, Dolores A. Black, Jeffrey D. Black, Stephen A. Wender, John M. O'Donnell, Elizabeth C. Auden, P. W. Lisowski, Heather Quinn
Publikováno v:
IEEE Transactions on Nuclear Science. 67:29-37
Single-event upsets (SEUs) were measured in thermal neutron-irradiated microcontrollers with 65- and 130-nm-node static random-access memories (SRAMs). The suspected upset mechanism is charge deposition from the energetic byproducts of 10B thermal ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e4a98c60afe1ab035e00de56419c90
https://doi.org/10.1109/tns.2019.2951996
https://doi.org/10.1109/tns.2019.2951996
Autor:
Jeff A. Dame, Andrew M. Tonigan, Paul E. Dodd, Ronald D. Schrimpf, Robert Steinbach, Kevin M. Warren, John Teifel, Jeffrey D. Black, Matthew Davis, James M. Trippe, Dolores A. Black, Richard S. Marquez, Robert A. Weller, Joseph G. Salas, Robert A. Reed, Marty R. Shaneyfelt
Publikováno v:
IEEE Transactions on Nuclear Science. 66:233-239
Silicon-on-insulator latch designs and layouts that are robust to multiple-node charge collection are introduced. A general Monte Carlo radiative energy deposition (MRED) approach is used to identify potential single-event susceptibilities associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf5aa72541c2ef7325c7ea8e9c9a803
https://doi.org/10.1109/tns.2018.2882944
https://doi.org/10.1109/tns.2018.2882944
Autor:
Heather Quinn, Matthew J. Marinella, John Brunhaver, Luis Bustamante, Michael Lee McLain, Barnaby Hugh, Sapan Agarwal, Arun Rodrigues, Benjamin Feinberg, Jeffrey D. Black, Matthew Cannon, Dolores A. Black, Clark Lawrence
Publikováno v:
Proposed for presentation at the Nuclear & Space Radiation Effects Conference held November 29 - December 30, 2020..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c87e8361a2ef6f38d1f692367269716
https://doi.org/10.2172/1831591
https://doi.org/10.2172/1831591
Autor:
Christopher H. Bennett, Andrew M. Tonigan, David Russell Hughart, Matthew Marinella, Robert A. Weller, Robert A. Reed, Ronald D. Schrimpf, Joseph G. Salas, Madeline Esposito, Dolores A. Black, Michael Lee McLain, Dennis R. Ball, Jeffrey D. Black, M. L. Breeding
Publikováno v:
Proposed for presentation at the Radiation and its Effects on Components and Systems (RADECS) 2020 held October 19 - November 20, 2020 in Virtual, Virtual, Virtual..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe83d646c854aeeaedd5ba44167752ce
https://doi.org/10.2172/1824738
https://doi.org/10.2172/1824738
Autor:
Fred Hartman, Timothy J. Sheridan, Michael Lee McLain, Paul E. Dodd, Thomas A. Weingartner, J. Kyle McDonald, Marty R. Shaneyfelt, Charles E. Hembree, Dolores A. Black
Publikováno v:
IEEE Transactions on Nuclear Science. 65:184-191
The effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4275e210a17069f3c04ded2c1843847
https://doi.org/10.1109/tns.2017.2764799
https://doi.org/10.1109/tns.2017.2764799
Autor:
Ian Zachary Wilcox, Dolores A. Black, William H. Robinson, Jeffrey D. Black, Daniel B. Limbrick
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1540-1549
Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5eba5885e0cd31391b629d163ff9ef
https://doi.org/10.1109/tns.2015.2449073
https://doi.org/10.1109/tns.2015.2449073
Autor:
M.C. Casey, Bharat L. Bhuva, J. R. Ahlbin, Michael W. McCurdy, A. Balasubramanian, O.A. Amusan, Dolores A. Black, Jeffrey D. Black, Robert A. Reed, Lloyd W. Massengill
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3347-3351
SEUs due to combinational logic in 90 nm CMOS is analyzed at various speeds using a new design approach called the combinational circuit for radiation effects self-test (C-CREST). C-CREST allows the cross-section of combinational logic to be increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73e811e788a58f8766a90e35dc49e68
https://doi.org/10.1109/tns.2008.2005900
https://doi.org/10.1109/tns.2008.2005900
Autor:
Paul E. Dodd, Dolores A. Black, A.D. Tipton, M.A. Xapsos, Daniel M. Fleetwood, William H. Robinson, Jeffrey D. Black, Ronald D. Schrimpf, Kevin M. Warren, Hak Kim, M. Friendlich, Dennis R. Ball, Nadim F. Haddad, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2943-2947
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c4c1e7f4fcaee1769fcdee60782085
https://doi.org/10.1109/tns.2008.2007231
https://doi.org/10.1109/tns.2008.2007231