Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Dolgopolov, V. P."'
Publikováno v:
JETP Lett. 116, 156 (2022)
We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/S
Externí odkaz:
http://arxiv.org/abs/2204.12565
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M. M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, Amy Y. X., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 12, 5080 (2022)
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
http://arxiv.org/abs/2106.05927
Autor:
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 103, 161302 (2021)
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The
Externí odkaz:
http://arxiv.org/abs/2101.05876
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 102, 081119(R) (2020)
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
http://arxiv.org/abs/2004.14968
Autor:
Dolgopolov, V. T.
Publikováno v:
Phys. Usp. 62, 633-648 (2019)
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum wells) in th
Externí odkaz:
http://arxiv.org/abs/1910.06303
Autor:
Melnikov, M. Yu., Shashkin, A. A., Dolgopolov, V. T., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 101, 045302 (2020)
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron sy
Externí odkaz:
http://arxiv.org/abs/1904.10413
Autor:
Melnikov, M. Yu., Shashkin, A. A., Dolgopolov, V. T., Zhu, Amy Y. X., Kravchenko, S. V., Huang, S. -H., Liu, C. W.
Publikováno v:
Phys. Rev. B 99, 081106(R) (2019); Erratum: Phys. Rev. B 107, 039902 (2023)
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samp
Externí odkaz:
http://arxiv.org/abs/1808.10063
Autor:
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
JETP Lett. 107, 794 (2018)
We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima
Externí odkaz:
http://arxiv.org/abs/1806.01795
Publikováno v:
JETP Letters 107, 320 (2018)
We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to
Externí odkaz:
http://arxiv.org/abs/1801.06984
Publikováno v:
Vestn. Samar. Gos. Tekhn. Univ., Ser. Fiz.-Mat. Nauki [J. Samara State Tech. Univ., Ser. Phys. Math. Sci.], 21:3 (2017), 417-422
Degenerate hyperbolic equations are dealing with many important issues for applied nature. While a variety of degenerate equations and boundary conditions, successfully matched to these differential equation, most in the characteristic coordinates re
Externí odkaz:
http://arxiv.org/abs/1801.02083