Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Dolbik, A. V."'
Autor:
Trezza, M., Prischepa, S. L., Cirillo, C., Fittipaldi, R., Sarno, M., Sannino, D., Ciambelli, P., Hesselberth, M. B. S., Lazarouk, S. K., Dolbik, A. V., Borisenko, V. E., Attanasio, C.
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made of holes of
Externí odkaz:
http://arxiv.org/abs/0810.1447
Publikováno v:
Physics, Chemistry & Applications of Nanostructures - Proceedings of the International Conference Nanomeeting - 2015. 2015, p548-551. 4p.
Autor:
LAZAROUK, S. K.1 serg@nano.bsuir.edu.by, DOLBIK, A. V.1, LABUNOV, V. A.1, NGUYEN, V. C.2, PITA, K.2 ekpita@ntu.edu.sg, KAM, C. H.2
Publikováno v:
Physics, Chemistry & Applications of Nanostructures: Reviews & Short Notes - Proceedings of International Conference Nanomeeting - 2011. 2011, p596-599. 4p.
Publikováno v:
Semiconductors. Sep2007, Vol. 41 Issue 9, p1113-1116. 4p. 1 Black and White Photograph, 2 Diagrams, 2 Graphs.
Publikováno v:
Physics, Chemistry & Applications of Nanostructures - Proceedings of the International Conference Nanomeeting ¨C 201. 2013, p611-613. 3p.
Autor:
Lazarouk, S. K., Leshok, A. A., Kozlova, T. A., Dolbik, A. V., Vi, Le Dinh, Ilkov, V. K., Labunov, V. A.
Publikováno v:
International Journal of Nanoscience; Jun-Aug2019, Vol. 18 Issue 3/4, pN.PAG-N.PAG, 5p
Autor:
Lazarouk, S. K.1 serg@nano.bsuir.edu.by, Dolbik, A. V.1, Jaguiro, P. V.1, Labunov, V. A.1, Borisenko, V. E.1
Publikováno v:
Semiconductors. Aug2005, Vol. 39 Issue 8, p881-883. 3p.
Publikováno v:
International Journal of Nanoscience; Jun-Aug2019, Vol. 18 Issue 3/4, pN.PAG-N.PAG, 3p
Publikováno v:
Physics, Chemistry & Application of Nanostructures: Reviews & Short Notes - Proceedings of the International Conference on Nanomeeting 2009; 2009, p410-413, 4p