Výsledky vyhledávání - "Dolar Khachariya"

High p-conductivity in AlGaN enabled by polarization field engineering

Autor: Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Letters. 122:152105

High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depend

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52d49b474f621d4f199f5942d2086bcc
https://doi.org/10.1063/5.0143427

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High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Autor: Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, James Loveless, Yan Guan, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Letters. 122:142108

Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbddbc7c46a821984a0d50643cc8465f
https://doi.org/10.1063/5.0146439

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Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Autor: Shane R. Stein, Dolar Khachariya, Seiji Mita, M. Hayden Breckenridge, James Tweedie, Pramod Reddy, Kacper Sierakowski, Grzegorz Kamler, Michał Boćkowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Express. 16:031006

We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low recti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::064f7c305b7164663b272aafaee60396
https://doi.org/10.35848/1882-0786/acc443

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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Autor: Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Letters. 120

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4a9ce9b63e5d32698aec000329f0c14
https://doi.org/10.1063/5.0083966

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Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

Autor: Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

Publikováno v: Applied Physics Letters. 120

In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe89675f7568734a2d76feb936329f89
https://doi.org/10.1063/5.0083588

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(Invited) A Path Toward Vertical GaN Superjunction Devices

Autor: Pramod Reddy, Zlatko Sitar, Erhard Kohn, Ramon Collazo, Dolar Khachariya, Spyridon Pavlidis, Dennis Szymanski

Publikováno v: ECS Transactions. 98:69-79

GaN devices offer exciting competition to incumbent technologies to meet the growing demand for high power electronic devices. The wide bandgap of GaN makes it possible to achieve higher breakdown voltages and reduced on-resistances compared to tradi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d7c59b73bb2d181278576236c958961
https://doi.org/10.1149/09806.0069ecst

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High conductivity and low activation energy in p-type AlGaN

Autor: Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Cristyan Quiñones-García, Yan Guan, Baxter Moody, Pramod Reddy, Ronny Kirste, Ramón Collazo, Zlatko Sitar

Publikováno v: Applied Physics Letters. 122:092103

Record-low p-type resistivities of 9.7 and 37 Ω cm were achieved in Al0.7Ga0.3N and Al0.8Ga0.2N films, respectively, grown on single-crystal AlN substrate by metalorganic chemical vapor deposition. A two-band conduction model was introduced to expla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::645de5ac74a51054044d11c6560ec1d4
https://doi.org/10.1063/5.0141863

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High electron mobility in AlN:Si by point and extended defect management

Autor: Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar

Publikováno v: Journal of Applied Physics. 132:185703

High room temperature n-type mobility, exceeding 300 cm2/Vs, was demonstrated in Si-doped AlN. Dislocations and CN−1 were identified as the main compensators for AlN grown on sapphire and AlN single crystalline substrates, respectively, limiting th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6af0b69810af3309ad00020c90637279
https://doi.org/10.1063/5.0124589

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