Zobrazeno 1 - 10
of 137
pro vyhledávání: '"Doh Kwon Lee"'
Publikováno v:
EcoMat, Vol 6, Iss 6, Pp n/a-n/a (2024)
Abstract Formamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects
Externí odkaz:
https://doaj.org/article/f55d3950fef14680993c5c81bb24e5fe
Autor:
Youngseok Lee, Chan Ul Kim, Yeeun Woo, Won-Mok Kim, Jeung-hyun Jeong, Dong-hwan Kim, Doh-Kwon Lee, Kyoung Jin Choi, Inho Kim
Publikováno v:
Progress in Photovoltaics; Jun2024, Vol. 32 Issue 6, p406-416, 11p
Autor:
Kyung Soo Cho, Jiseong Jang, Jeung-Hun Park, Doh-Kwon Lee, Soomin Song, Kihwan Kim, Young-Joo Eo, Jae Ho Yun, Jihye Gwak, Choong-Heui Chung
Publikováno v:
ACS Omega, Vol 5, Iss 37, Pp 23983-23988 (2020)
Externí odkaz:
https://doaj.org/article/a9b040de33324d4ba1847d7ccf32eb06
Enhanced efficiency of crystalline Si solar cells based on kerfless-thin wafers with nanohole arrays
Autor:
Hyeon-Seung Lee, Jaekwon Suk, Hyeyeon Kim, Joonkon Kim, Jonghan Song, Doo Seok Jeong, Jong-Keuk Park, Won Mok Kim, Doh-Kwon Lee, Kyoung Jin Choi, Byeong-Kwon Ju, Taek Sung Lee, Inho Kim
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-12 (2018)
Abstract Several techniques have been proposed for kerfless wafering of thin Si wafers, which is one of the most essential techniques for reducing Si material loss in conventional wafering methods to lower cell cost. Proton induced exfoliation is one
Externí odkaz:
https://doaj.org/article/2df4e80b0c414f7db31c0ce7d436e071
Autor:
Inho Kim, Youngseok Lee, Jeong-hyun Woo, Keonhee Kim, Kyeong-Seok Lee, YeonJoo Jeong, Jaewook Kim, Gyu Weon Hwang, Doh-Kwon Lee, Ju-Young Kim
Ultrathin crystalline Si wafers, which are more flexible than conventional ones, can apply to curved surfaces, enabling a wide range of applications such as building integrated photovoltaics, vehicle integrated photovoltaics and wearable devices. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c588b63c904fb5b0ea0b7b342098157
https://doi.org/10.21203/rs.3.rs-2566768/v1
https://doi.org/10.21203/rs.3.rs-2566768/v1
Autor:
Atefeh Yadegarifard, Haram Lee, Hae-Jun Seok, Inho Kim, Byeong-Kwon Ju, Han-Ki Kim, Doh-Kwon Lee
Publikováno v:
Nano Energy. 112:108481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a453fd8ce9345e0b1124e2c03ce92127
https://doi.org/10.1016/j.nanoen.2023.108481
https://doi.org/10.1016/j.nanoen.2023.108481
Publikováno v:
Nano Energy. 111:108431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf18cf3bb79db9036db74153380a943c
https://doi.org/10.1016/j.nanoen.2023.108431
https://doi.org/10.1016/j.nanoen.2023.108431
Publikováno v:
Solar Energy. 208:957-965
Optimally designed Si nanostructures can serve as effective light trapping structures for flexible crystalline ultrathin Si solar cells. In this study, we develop a unique quasi-hexagonal inverted nano-pyramid in a hexagonal array, fabricated by a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c94348773e0dfd492b327aad7f384286
https://doi.org/10.1016/j.solener.2020.08.063
https://doi.org/10.1016/j.solener.2020.08.063
Autor:
Doh-Kwon Lee, Kihwan Kim, Jiseong Jang, Jae Ho Yun, Jeung Hun Park, Young-Joo Eo, Kyung Soo Cho, Jihye Gwak, Choong-Heui Chung, Soomin Song
Publikováno v:
ACS Omega, Vol 5, Iss 37, Pp 23983-23988 (2020)
ACS Omega
ACS Omega
CdS has been known to be one of the best junction partners for Cu(In,Ga)Se2 (CIGS) in CIGS solar cells. However, the use of thick CdS buffer decreases the short-circuit current density of CIGS solar cells. There are two obstacles that limit the use o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8d64684ec2f427c0f0225b58261e747
https://doaj.org/article/a9b040de33324d4ba1847d7ccf32eb06
https://doaj.org/article/a9b040de33324d4ba1847d7ccf32eb06
Autor:
Hyo Seok Lee, Cuc Thi Kim Mai, Pravin S. Pawar, Jae Yu Cho, KrishnaRao Eswar Neerugatti, Doh-Kwon Lee, Jaeyeong Heo, R. Nandi
Publikováno v:
ACS Applied Energy Materials. 3:10393-10401
The effect of the temperature ramping rate of vapor transport deposition (VTD) on the morphology, crystallinity and orientation of SnS-absorber layers and their impact on SnS/CdS heterojunction thi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fdb832e7ff3fb1deb3bcc52707a51f8
https://doi.org/10.1021/acsaem.0c01164
https://doi.org/10.1021/acsaem.0c01164