Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Dogan Yilmaz"'
Autor:
Salahuddin Zafar, Busra Cankaya Akoglu, Erdem Aras, Dogan Yilmaz, Muhammad Imran Nawaz, Ahsanullah Kashif, Ekmel Ozbay
Publikováno v:
International Journal of Circuit Theory and Applications
In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing
Autor:
Gizem Tendurus Caglar, Yunus Erdem Aras, Emirhan Urfali, Dogan Yilmaz, Ekmel Ozbay, Sedat Nazlibilek
Publikováno v:
Microwave Mediterranean Symposium (MMS)
Conference Name: 2022 Microwave Mediterranean Symposium (MMS) Date of Conference: 09-13 May 2022 Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e68fa5b646de83a1046a78bfd2142f4
https://hdl.handle.net/11693/111221
https://hdl.handle.net/11693/111221
Akademický článek
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Publikováno v:
Materials Research Express
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system. A recipe usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b8a8d571e27559276cf88b64338a2b4
https://hdl.handle.net/11693/77220
https://hdl.handle.net/11693/77220
Publikováno v:
Engineering Research Express
The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM
Autor:
Erdem Aras, Busra Cankaya Akoglu, Bayram Butun, Kubra Elif Asan, Dogan Yilmaz, Ekmel Ozbay, Oguz Odabasi, Salahuddin Zafar
Publikováno v:
IEEE Transactions on Electron Devices
In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0759003a08555c292d65a1cc8f6e21a
https://aperta.ulakbim.gov.tr/record/236312
https://aperta.ulakbim.gov.tr/record/236312
Autor:
Sinan Osmanoglu, Mustafa Ozturk, Ekmel Özbay, Salahuddin Zafar, Busra Cankaya, Dogan Yilmaz, A. Kashif
Publikováno v:
Proceedings of the 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020
Date of Conference: 14-18 January 2020 Conference Name: 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020 In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4d772012e75ecc9daf69ac1109d1aab
https://hdl.handle.net/11693/75713
https://hdl.handle.net/11693/75713
Autor:
Mustafa Kemal Öztürk, Sadan Ozcan, Omer Cengiz, Ahmet Toprak, Dogan Yilmaz, Ekmel Ozbay, Ozlem Sen, Sinan Osmanoglu, Bayram Butun
Publikováno v:
Semiconductor Science and Technology
This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, 125 μm gate width and 0.3
Publikováno v:
2009 IEEE LEOS Annual Meeting Conference Proceedings.
The recent developments in high quality GaN/AlGaN material growth technology have led to the realization of high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region. Diverse applications wherein GaN/AlGaN-based ph
Autor:
Nazan Aydın, Hasan Mervan Aytaç, Esra Yazıcı, Doğan Yılmaz, Pınar Çetinay Aydın, Gökşen Yüksel Yalçın, Yücel Kadıoğlu, Cana Canbay, Merve Terzioğlu, Onur Şenol, Cavide Çakmak, Aysel Özer
Publikováno v:
Psychiatry and Clinical Psychopharmacology, Vol 29, Iss 3, Pp 264-275 (2019)
BACKGROUND: Haloperidol has been used as an effective antipsychotic for many years and continues to be one of the first options in difficult patients who require parenteral therapy in the acute phase. However, the depot form is less preferred in the
Externí odkaz:
https://doaj.org/article/a4650e32799247319891e44d42477e9d