Zobrazeno 1 - 10
of 13 672
pro vyhledávání: '"Dodson, J"'
Autor:
Park, Sanghyeok, Benson, Jared, Corrigan, J., Dodson, J. P., Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.
Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single
Externí odkaz:
http://arxiv.org/abs/2408.15380
Autor:
Schug, Daniel, Kovach, Tyler J., Wolfe, M. A., Benson, Jared, Park, Sanghyeok, Dodson, J. P., Corrigan, J., Eriksson, M. A., Zwolak, Justyna P.
The rapid development of quantum dot (QD) devices for quantum computing has necessitated more efficient and automated methods for device characterization and tuning. Many of the measurements acquired during the tuning process come in the form of imag
Externí odkaz:
http://arxiv.org/abs/2402.13699
Autor:
Calhoun-Sauls, Ann
This is an independent replication as part of the Reproducibility Project: Psychology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3eba97691ce995c3d97e33bf7081d9f4
Autor:
Corrigan, J., Dodson, J. P., Thorgrimsson, Brandur, Neyens, Samuel F., Knapp, T. J., McJunkin, Thomas, Coppersmith, S. N., Eriksson, M. A.
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge
Externí odkaz:
http://arxiv.org/abs/2210.08315
Autor:
McJunkin, Thomas, Harpt, Benjamin, Feng, Yi, Losert, Merritt P., Rahman, Rajib, Dodson, J. P., Wolfe, M. A., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Joynt, Robert, Eriksson, M. A.
Publikováno v:
Nature Communications 13, 7777 (2022)
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley split
Externí odkaz:
http://arxiv.org/abs/2112.09765
Autor:
McJunkin, Thomas, MacQuarrie, E. R., Tom, Leah, Neyens, S. F., Dodson, J. P., Thorgrimsson, Brandur, Corrigan, J., Ercan, H. Ekmel, Savage, D. E., Lagally, M. G., Joynt, Robert, Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.
Publikováno v:
Phys. Rev. B 104, 085406 (2021)
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostr
Externí odkaz:
http://arxiv.org/abs/2104.08232
Autor:
Dodson, J. P., Ercan, H. Ekmel, Corrigan, J., Losert, Merritt, Holman, Nathan, McJunkin, Thomas, Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Physical Review Letters (Vol. 128, Issue 14), (2022)
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron val
Externí odkaz:
http://arxiv.org/abs/2103.14702
Autor:
Corrigan, J., Dodson, J. P., Ercan, H. Ekmel, Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Knapp, T. J., Holman, Nathan, McJunkin, Thomas, Neyens, Samuel F., MacQuarrie, E. R., Foote, Ryan H., Edge, L. F., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 127, 127701 (2021)
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such contro
Externí odkaz:
http://arxiv.org/abs/2009.13572
Autor:
Holman, Nathan, Dodson, J. P., Edge, L. F., Coppersmith, S. N., Friesen, M., McDermott, R., Eriksson, M. A.
We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic cap
Externí odkaz:
http://arxiv.org/abs/2006.02514
Autor:
Dodson, J. P., Holman, Nathan, Thorgrimsson, Brandur, Neyens, Samuel F., MacQuarrie, E. R., McJunkin, Thomas, Foote, Ryan H., Edge, L. F., Coppersmith, S. N., Eriksson, M. A.
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) pr
Externí odkaz:
http://arxiv.org/abs/2004.05683