Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Do-Sun Lee"'
Publikováno v:
Korea CPTED Association. 12:57-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224c2a99cf8d4a4414d15829f19bf78a
https://doi.org/10.26470/jcssed.2021.12.3.57
https://doi.org/10.26470/jcssed.2021.12.3.57
Publikováno v:
Korea CPTED Association. 12:89-123
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f22a24548e2a0e5f92d744836cee107c
https://doi.org/10.26470/jcssed.2021.12.1.89
https://doi.org/10.26470/jcssed.2021.12.1.89
Autor:
Do-Sun Lee
Publikováno v:
The History Education Review. 30:395-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::892debc53d40e8bfc3f5c68965bae5c7
https://doi.org/10.31968/hae.2020.05.30.395
https://doi.org/10.31968/hae.2020.05.30.395
Autor:
Do Sun Lee, Junny Park
Publikováno v:
Korea CPTED Association. 9:35-63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b38b7304762ee59f1bcb4fc82214ed16
https://doi.org/10.26470/jcssed.2018.9.2.33
https://doi.org/10.26470/jcssed.2018.9.2.33
Autor:
Do Sun Lee
Publikováno v:
The Correction Welfare Society of Korea. 56:81-99
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73998e5c00508afd052c6753ed3720b2
https://doi.org/10.35422/cwsk.2018.56.4
https://doi.org/10.35422/cwsk.2018.56.4
Publikováno v:
ECS Transactions. 64:11-18
The effects of various parameters in copper electroplating electrolyte on the filling characteristics of through silicon via(TSVs). Among the various parameters, the concentration of dissolved oxygen was found to be susceptible to bottom-up filling r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088c33ab65643df10bae90f10a3a7d40
https://doi.org/10.1149/06445.0011ecst
https://doi.org/10.1149/06445.0011ecst
Autor:
Do Sun Lee
Publikováno v:
The Police Science Journal. 6:145-169
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be5a530bb33086056906ab22c8fd0c78
https://doi.org/10.16961/polips.2011.6.2.145
https://doi.org/10.16961/polips.2011.6.2.145
Autor:
Yeong-lyeol Park, Ki-Young Yun, Jiwoong Sue, Kwang-jin Moon, Chilhee Chung, So-Young Lee, Jin-ho An, Gil-heyun Choi, Byung-lyul Park, Ho-Jun Lee, Ho-Kyu Kang, Do-Sun Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Stresses induced by the large volume of Cu in Through Silicon Vias (TSV) can result in global/local Cu extrusion which may affect reliability in 3D chip stacking technologies beyond the 28 nm node for high performance mobile devices. In this work, TS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b198e77574825ebd19eef96489ce54
https://doi.org/10.1109/iitc.2012.6251586
https://doi.org/10.1109/iitc.2012.6251586
Autor:
Do-Sun Lee, Woon-kyung Lee, Kim Sunggil, Seong-Ook Jung, Joo-Sun Choi, Kyungho Ryu, Heechai Kang
Publikováno v:
CICC
An all-digital multiphase DLL is presented that is robust to delay mismatch due to process variation. Each of four 90° phase shift blocks accurately align each phase to 90° delay using its own ring oscillator and locking delay code. Harmonic lockin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7200c61baa32b78e3407447f5e17d62
https://doi.org/10.1109/cicc.2010.5617474
https://doi.org/10.1109/cicc.2010.5617474
Autor:
Moon Gi Kang, Jin Bum Kim, Yun-Seung Shin, Sangjoo Lee, Woo-Seop Kim, Do-Sun Lee, Yong-Hoon Son, U. I. Chung, Sung-Wook Kang, June Moon, Hyung-Gon Kim, K. H. Lee, P.K. Kang, Eun-Cheol Lee, In-Sun Jung, J.W. Lee, Young-Rok Kim
Publikováno v:
2006 International SiGe Technology and Device Meeting.
The SiGe SD structure in peripheral PMOS area of DRAM was successfully integrated without any degradation of peripheral NMOS properties, which is the first approach to DRAM. The PMOS performance enhancement was found to be more than 40%. The authors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11ebc2e43011fa3bbe121f3418828a1
https://doi.org/10.1109/istdm.2006.246571
https://doi.org/10.1109/istdm.2006.246571