Zobrazeno 1 - 10
of 151
pro vyhledávání: '"Do Kyung, Hwang"'
Autor:
Changsoon Choi, Henry Hinton, Hyojin Seung, Sehui Chang, Ji Su Kim, Woosang You, Min Sung Kim, Jung Pyo Hong, Jung Ah Lim, Do Kyung Hwang, Gil Ju Lee, Houk Jang, Young Min Song, Dae-Hyeong Kim, Donhee Ham
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract The bioinspired camera, comprising a single lens and a curved image sensor—a photodiode array on a curved surface—, was born of flexible electronics. Its economical build lends itself well to space-constrained machine vision applications
Externí odkaz:
https://doaj.org/article/3b3a7c80c2b149b99f2f555f7bfef638
Autor:
Seungho Song, Changsoon Choi, Jongtae Ahn, Je‐Jun Lee, Jisu Jang, Byoung‐Soo Yu, Jung Pyo Hong, Yong‐Sang Ryu, Yong‐Hoon Kim, Do Kyung Hwang
Publikováno v:
InfoMat, Vol 6, Iss 2, Pp n/a-n/a (2024)
Abstract To overcome the intrinsic inefficiency of the von Neumann architecture, neuromorphic devices that perform analog vector–matrix multiplication have been highlighted for achieving power‐ and time‐efficient data processing. In particular,
Externí odkaz:
https://doaj.org/article/c2b9cfc26597451d8e81f5573efae70f
Autor:
Hanna Lee, Jun Ho Hwang, Seung Ho Song, Hyemi Han, Seo‐Jung Han, Bong Lim Suh, Kahyun Hur, Jihoon Kyhm, Jongtae Ahn, Jeong Ho Cho, Do Kyung Hwang, Eunji Lee, Changsoon Choi, Jung Ah Lim
Publikováno v:
Advanced Science, Vol 10, Iss 27, Pp n/a-n/a (2023)
Abstract High‐performance chiroptical synaptic phototransistors are successfully demonstrated using heterojunctions composed of a self‐assembled nanohelix of a π‐conjugated molecule and a metal oxide semiconductor. To impart strong chiroptical
Externí odkaz:
https://doaj.org/article/01f76642d8c04fd7ac6e0427dea5149c
Autor:
Minjong Lee, Tae Wook Kim, Chang Yong Park, Kimoon Lee, Takashi Taniguchi, Kenji Watanabe, Min-gu Kim, Do Kyung Hwang, Young Tack Lee
Publikováno v:
Nano-Micro Letters, Vol 15, Iss 1, Pp 1-11 (2022)
Highlights Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed. Non-classical t
Externí odkaz:
https://doaj.org/article/c41171f4639d400d99aafb30ec104914
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-6 (2022)
Abstract Two-dimensional (2D) materials have been extensively adopted in various device architectures for advanced applications owing to their structural diversity, high functionality, and ease of integration. Among the various architectures, split-g
Externí odkaz:
https://doaj.org/article/5e12b135f7de46fa8454d1ae7846f58e
Autor:
Joo-Hyun Kim, Hyemi Han, Min Kyu Kim, Jongtae Ahn, Do Kyung Hwang, Tae Joo Shin, Byoung Koun Min, Jung Ah Lim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work,
Externí odkaz:
https://doaj.org/article/4eb48d231fad4ad0b718aa5d963f6794
Autor:
Dongseob Ji, Jisu Jang, Joon Hui Park, Dasol Kim, You Seung Rim, Do Kyung Hwang, Yong-Young Noh
Publikováno v:
Journal of Information Display, Vol 22, Iss 1, Pp 1-11 (2021)
This review aims to provide a technical roadmap and progress update for backplane thin film transistors (TFTs) used in organic light emitting diodes flat panel displays and next-generation flexible displays. In the introduction, we provide a general
Externí odkaz:
https://doaj.org/article/d1b4a96b3ed24c7e8758e65c896b6dfd
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Publikováno v:
Results in Physics, Vol 21, Iss , Pp 103854- (2021)
A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represen
Externí odkaz:
https://doaj.org/article/a84edc46b25143e0916c879b1ab333dd
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 60:37-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72411160dd88f559032b26468189c8d0
https://doi.org/10.5573/ieie.2023.60.1.37
https://doi.org/10.5573/ieie.2023.60.1.37