Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Do Han Lee"'
Autor:
Deok Sung Han, Ho Rim Moon, Sang Won Lee, Do Han Lee, Ji Yong Oh, Keun Seong Lee, Jae Gab Kim
Publikováno v:
Progress in Nuclear Energy. 129:103492
The Korean nuclear power regulatory body issued the standard design approval for a 1500-MW advanced power reactor in 2014. The reactor was designed based on a four-train independent safety concept with a passive auxiliary feedwater system. Its full p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4139f263fa11979f3caa6746b1f25564
https://doi.org/10.1016/j.pnucene.2020.103492
https://doi.org/10.1016/j.pnucene.2020.103492
Autor:
Ji Hun Park, Dongjin Byun, Jong Mun Choi, Baek-Mann Kim, Chang Gyoun Kim, Do-Han Lee, Taek-Mo Chung
Publikováno v:
Microelectronic Engineering. 89:109-115
A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)"2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2ee7d2eb03eca07d130ddb659ae101a
https://doi.org/10.1016/j.mee.2011.08.009
https://doi.org/10.1016/j.mee.2011.08.009
Autor:
Do-Han Lee, Young-Kil Kim
Publikováno v:
The Journal of the Korean Institute of Information and Communication Engineering. 14:1687-1692
In this paper, we research the method for write quality improvement by temperature characteristic of Laser diode for optical recording. Differential Resistance of Blu-ray laser diode is changed by temperature. We analyze the effect of the change of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a456781fe137bcc51ddf2ecb0a8e6be
https://doi.org/10.6109/jkiice.2010.14.7.1687
https://doi.org/10.6109/jkiice.2010.14.7.1687
Autor:
Seungmoo Lee, Bum-Joon Kim, Jong Mun Choi, Dongjin Byun, Seong Eon Jin, Tack Mo Chung, Chang Gyoun Kim, Do-Han Lee
Publikováno v:
Surface Review and Letters. 17:307-310
Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e28a18df5a9b0b7b95c761e57eb1cd
https://doi.org/10.1142/s0218625x10013801
https://doi.org/10.1142/s0218625x10013801
Publikováno v:
Journal of the Korean Magnetics Society. 14:196-200
In order to improve dendritic formation of NdFe14/B phase in the strip-cast Nd-Fe-B alloys that are frequently used for production of high energy sintered magnets, effect of small substitutional additives such as Cu (0.3～1.0 at. %) and Co (0.5～1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5173d264c7bb7aeafd8b54fee902138
https://doi.org/10.4283/jkms.2004.14.5.196
https://doi.org/10.4283/jkms.2004.14.5.196
Publikováno v:
Materials Research Bulletin. 47:2888-2890
The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure and temperature. Vertically aligned ZnO nanorods were grown on c-plane of sapphire substrate at 600 °C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f7bde097bfc60a3b45933676782bcf
https://doi.org/10.1016/j.materresbull.2012.04.099
https://doi.org/10.1016/j.materresbull.2012.04.099
Autor:
Tae Hee Han, Do Han Lee
Publikováno v:
MWSCAS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f626b128bc6f734c95db9727556e95a
https://doi.org/10.1109/mwscas.2014.6908369
https://doi.org/10.1109/mwscas.2014.6908369
Autor:
Dongjin Byun, Samseok Jang, So Young Yim, Sang-Il Kim, Do-Han Lee, Jaesang Lee, Jun Hyuck Kwon, Ji Hun Park
Publikováno v:
Japanese Journal of Applied Physics. 51:115501
Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (11̄02) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97e95de2ef1361892c319df8768bafd
https://doi.org/10.1143/jjap.51.115501
https://doi.org/10.1143/jjap.51.115501