Zobrazeno 1 - 10
of 192
pro vyhledávání: '"Doğan, Pınar"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Doğan, Pınar, Şendir, Merdiye
Publikováno v:
In Thinking Skills and Creativity September 2022 45
Autor:
Doğan, Pınar, Karakul, Atiye, Akgül, Esra Ardahan, Öztornaci, Beste Özgüven, Sarı, Hatice Yıldırım
Publikováno v:
In Enfermería Clínica (English Edition) September-October 2022 32(5):306-315
Autor:
Doğan, Pınar1 (AUTHOR), Yılmaz, Hatice Bal2 (AUTHOR)
Publikováno v:
Journal of Turkish Sleep Medicine. Jun2023, Vol. 10 Issue 2, p129-136. 8p.
Publikováno v:
Journal of Inonu University Health Services Vocational School / Inönü Üniversitesi Sağlık Hizmetleri Meslek Yüksekokulu Dergisi. har2023, Vol. 11 Issue 2, p1591-1602. 12p.
Autor:
Ardahan Akgül, Esra *, Karakul, Atiye, Altın, Asiye, Doğan, Pınar, Hoşgör, Münevver, Oral, Akgün
Publikováno v:
In Complementary Therapies in Medicine August 2021 60
Autor:
Pfüller, Carsten, Corfdir, Pierre, Hauswald, Christian, Flissikowski, Timur, Kong, Xiang, Zettler, Johannes K., Fernández-Garrido, Sergio, Doğan, Pınar, Grahn, Holger T., Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Phys. Rev. B 94, 155308 (2016)
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temp
Externí odkaz:
http://arxiv.org/abs/1607.04036
Autor:
Ceyhun, Serdar, Doğan, Pınar Karacan, Özman, Cemal, Dokuzoğlu, Gökhan, Devecioğlu, Sebahattin
Publikováno v:
Journal of Sport for All & Recreation / Herkes Için Spor ve Rekreasyon; Mar2024, Vol. 6 Issue 1, p73-80, 8p
Autor:
Doğan, Pınar
Publikováno v:
In Journal of Behavioral and Experimental Economics February 2020 84
Autor:
Lähnemann, Jonas, Jahn, Uwe, Brandt, Oliver, Flissikowski, Timur, Dogan, Pinar, Grahn, Holger T.
Publikováno v:
J. Physics D: Appl. Phys. 47, 423001 (2014)
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the
Externí odkaz:
http://arxiv.org/abs/1405.1261