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pro vyhledávání: '"Dnyanesh S. Havaldar"'
Publikováno v:
Solid-State Electronics. 53:256-265
The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson’s equation. 2D Poisson’s equation is solved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c097bcfc350a540752ba17317501f588
https://doi.org/10.1016/j.sse.2008.12.001
https://doi.org/10.1016/j.sse.2008.12.001
