Zobrazeno 1 - 10
of 186
pro vyhledávání: '"Dmytro B. But"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to ac
Externí odkaz:
https://doaj.org/article/17626f70819f4e5199cf72445713a382
Autor:
Jeong Woo Han, Pavlo Sai, Dmytro B. But, Ece Uykur, Stephan Winnerl, Gagan Kumar, Matthew L. Chin, Rachael L. Myers-Ward, Matthew T. Dejarld, Kevin M. Daniels, Thomas E. Murphy, Wojciech Knap, Martin Mittendorff
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects
Externí odkaz:
https://doaj.org/article/02af78d1966f468f9a78bedfaa5ee21d
Autor:
Dmytro B. But, Kȩstutis Ikamas, Cezary Kołaciński, Aleksandr V. Chernyadiev, Domantas Vizbaras, Wojciech Knap, Alvydas Lisauskas
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-8 (2023)
Abstract In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fu
Externí odkaz:
https://doaj.org/article/40b70c36dfa845268cbd9a0c7f396d9c
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/6a097b335c6b496eb3c0f959b8afbde7
Autor:
Krysl, Anastasiya, But, Dmytro B., Ikamas, Kęstutis, Holstein, Jakob, Shevchik-Shekera, Anna, Roskos, Hartmut G., Lisauskas, Alvydas
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with mon
Externí odkaz:
http://arxiv.org/abs/2404.07715
Autor:
Aleksandra Przewłoka, Serguei Smirnov, Irina Nefedova, Aleksandra Krajewska, Igor S. Nefedov, Petr S. Demchenko, Dmitry V. Zykov, Valentin S. Chebotarev, Dmytro B. But, Kamil Stelmaszczyk, Maksym Dub, Dariusz Zasada, Alvydas Lisauskas, Joachim Oberhammer, Mikhail K. Khodzitsky, Wojciech Knap, Dmitri Lioubtchenko
Publikováno v:
Materials, Vol 14, Iss 23, p 7399 (2021)
Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing d
Externí odkaz:
https://doaj.org/article/c138fbb9f31c45d696b27d7968c99621
Autor:
Kęstutis Ikamas, Dmytro B. But, Albert Cesiul, Cezary Kołaciński, Tautvydas Lisauskas, Wojciech Knap, Alvydas Lisauskas
Publikováno v:
Sensors, Vol 21, Iss 17, p 5795 (2021)
The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines.
Externí odkaz:
https://doaj.org/article/d8f1d95178414f099033f29fbdc27309
Autor:
Maksym Dub, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, Sergey Rumyantsev
Publikováno v:
Micromachines, Vol 12, Iss 6, p 721 (2021)
AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the su
Externí odkaz:
https://doaj.org/article/18236b22045d440a98aaae54c43a929e
Autor:
Elham Javadi, Dmytro B. But, Kęstutis Ikamas, Justinas Zdanevičius, Wojciech Knap, Alvydas Lisauskas
Publikováno v:
Sensors, Vol 21, Iss 9, p 2909 (2021)
This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result
Externí odkaz:
https://doaj.org/article/f4376b329a9540f7a139939e407e80fd
Homodyne Spectroscopy with Broadband Terahertz Power Detector Based on 90-nm Silicon CMOS Transistor
Publikováno v:
Applied Sciences, Vol 11, Iss 1, p 412 (2021)
Over the last two decades, photomixer-based continuous wave systems developed into versatile and practical tools for terahertz (THz) spectroscopy. The high responsivity to the THz field amplitude of photomixer-based systems is predetermined by the ho
Externí odkaz:
https://doaj.org/article/1e8e65fdedcf4c0996dc333912a716c1