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pro vyhledávání: '"Dmitryi S. Sokolov"'
Publikováno v:
SPIE Proceedings.
When using diodes with Al-(i-GaAs) - (n-GaAs) Schottky barrier under electron beam as amplifying structures there was obtained abnormally high coefficient of cathode amplification Kamp approximately equals 25000 under electrons energy of 10 keV and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d769f2ebbcc2a1b6040f0e6c2bf61a30
https://doi.org/10.1117/12.350488
https://doi.org/10.1117/12.350488
