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pro vyhledávání: '"Dmitry Yu. Kasantsev"'
Autor:
Boris Ya. Ber, V. N. Jmerik, Nataliya M. Shmidt, A. M. Mizerov, Stefan Ivanov, Dmitry Yu. Kasantsev, T. A. Komissarova
Publikováno v:
physica status solidi c. 6
We report on plasma-assisted molecular beam epitaxy (PA MBE) growth of Mg-doped GaN and AlxGa1–xN (x = 0.15 and 0.42) layers on c-sapphire (N-polarity) and studies of their electrical properties as functions of growth temperature, Mg flux and alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb50d668c4893558ae8828ba7ad6d17
https://doi.org/10.1002/pssc.200880939
https://doi.org/10.1002/pssc.200880939
