Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dmitry Yu Protasov"'
Autor:
Konstantin V. Feklistov, Aleksey G. Lemzyakov, Alexander A. Shklyaev, Dmitry Yu. Protasov, Alexander S. Deryabin, Evgeny V. Spesivsev, Dmitry V. Gulyaev, Alexey M. Pugachev, Dmitriy G. Esaev
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 2, Pp 57-68 (2023)
In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivi
Externí odkaz:
https://doaj.org/article/f8985288c9a2428194c008f4d0f308ec
Autor:
Vadim A. Kuznetsov, Dmitry Yu. Protasov, V. V. Vasilyev, Vladimir Ya. Kostyuchenko, V. S. Varavin
Publikováno v:
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).
The influence of a drift electric field on the photoelectromagnetic (PEM) effect on thin films of n-type mercury cadmium telluride is investigated. It was obtained that the strong magnetoresistance due to two types of electrons (“fast” bulk and
Publikováno v:
Proceedings of the Russian higher school Academy of sciences. :43-51
Autor:
S. A. Teys, Kirill A. Svit, Yakushev Maksim, Konstantin Zhuravlev, Larisa L. Sveshnikova, Dmitry Yu. Protasov
Publikováno v:
physica status solidi c. 13:417-420
Formation and assembling of CdS nanocrystals (NC) on highly-ordered pyrolytic graphite (HOPG) and on oxidized silicon substrates have been investigated by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). NC were initially formed
Autor:
Michael A. Dem'yanenko, Dmitry G. Esaev, Aleksandr I. Toropov, Natalia A. Valisheva, Sergey A. Dvoretsky, Dmitry V. Dmitriev, Dmitry V. Gulyaev, Vladimir A. Fateev, Igor V. Marchishin, Dmitry Yu Protasov, Anatoly P. Savchenko, Victor N. Ovsyuk, Konstantin Zhuravlev
Publikováno v:
Two-dimensional Materials for Photodetector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e00a591e7c18e7a9f080ac542261c8bb
http://www.intechopen.com/articles/show/title/algaas-gaas-quantum-well-infrared-photodetectors
http://www.intechopen.com/articles/show/title/algaas-gaas-quantum-well-infrared-photodetectors
Autor:
T. A. Duda, Larisa L. Sveshnikova, Dmitry Yu. Protasov, Sergei A. Teys, Anton S. Kozhuhov, Konstantin S. Zhuravlev, Kirill A. Svit, Wen-Bin Jian
Publikováno v:
The Journal of Physical Chemistry C. 115:20148-20152
Aggregation clusters of CdS quantum dots (QDs) on the highly ordered pyrolytic graphite substrate were investigated by atomic force microscopy and scanning tunneling microscopy. QDs were initially ...
Publikováno v:
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
In heterostructures p-HgCdTe changes of density and mobility of major carriers, mobility and lifetime of minor carriers were investigated after some contacts with water and annealing at 80°C. The obtained dependencies for samples from various hetero
Autor:
Dmitry Yu. Protasov, A.S. Kozhukhov, Tatiana A. Duda, Kirill A. Svit, Konstantin S. Zhuravlev, Larisa L. Sveshnikova
Publikováno v:
2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.
Clustering of CdS nanocrystals during evaporation of the Langmure—Blodgett matrix and influence of matrix thickness on the parameters of the resulting clusters have been investigated. Information about the size and spatial distribution of nanocryst
Autor:
Larisa L. Sveshnikova, Nikolay V. Surovtsev, S.A. Batsanov, T. A. Duda, Cameliu Himcinschi, Anton K. Gutakovskii, Francisc Haidu, Dietrich R. T. Zahn, Volodymir Dzhagan, Dmitry Yu. Protasov, Nikolay A. Yeryukov, Sergey V. Adichtchev, Alexander G. Milekhin
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:04D109
CdZnS quantum dots (QDs) with systematically varied Zn content (from 0 to 100%) are formed in an organic matrix using the Langmuir–Blodgett technique. Annealing of the QD structures leads to a removal of the organic matrix and an increase in the Zn