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pro vyhledávání: '"Dmitry Yakimets"'
Autor:
Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 658-663 (2018)
Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on
Externí odkaz:
https://doaj.org/article/709d3d9d18f44de7bb0fffa8ea46a664
