Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dmitry V. Shestovski"'
Autor:
Vladimir B. Odzaev, Aliaksandr N. Pyatlitski, Uladislau S. Prasalovich, Natalya S. Kovalchuk, Yaroslav A. Soloviev, Dmitry V. Shestovski, Valentin Yu. Yavid, Yuri N. Yankovski
Publikováno v:
Journal of the Belarusian State University. Physics. :81-92
The electrical characteristics of power MOSFETs additionally implanted with nitrogen ions have been studied. Ion implantation of nitrogen was carried out through a protective oxide of 23 nm thickness with energies of 20 and 40 keV and doses of 1 ⋅
Autor:
Natalya S. Kovalchuk, Yuliya A. Marudo, Anna A. Omelchenko, Uladzimir A. Pilipenka, Vitali A. Saladukha, Sergey A. Demidovich, Vladimir V. Kolos, Victor M. Anishchik, Viktar A. Filipenia, Dmitry V. Shestovski
Publikováno v:
Journal of the Belarusian State University. Physics. :80-87
The charge properties of thin dielectrics, obtained by rapid thermal processing (RTP), and their interfaces with silicon for MOS transistors are investigated. The production of insulator layers was carried out by a two- or three-stage RTP with photon
Autor:
Irina N. Parkhomenko, Dmitry V. Shestovski, Sergey A. Demidovich, I. A. Romanov, Uladzimir A. Pilipenka, Vitali A. Saladukha, N. S. Kovalchuk, Liudmila Vlasukova
Publikováno v:
Journal of the Belarusian State University. Physics. :26-31
Emission of the silicon oxide films grown on Si by wet thermal oxidation at 900 °С and by plasma-enhanced chemical vapor deposition from the SiH4 + N2O mixture at 350 °С has been compared using electroluminescence. The electroluminescence spectra
Autor:
Aliaksandr N. Pyatlitski, Dmitry V. Shestovski, Uladislau S. Prasalovich, Viktar A. Filipenia, Anatoli K. Panfilenka, N. S. Kovalchuk, Vladimir B. Odzaev, Yaroslav A. Soloviev
Publikováno v:
Journal of the Belarusian State University. Physics. :55-64
Power MOS-transistors with vertical structure are investigated. Additionally, in some devices, ion implantation of nitrogen with energies of 20 and 40 keV was carried out in a dose range of 1 ⋅1013–5 ⋅ 1014 cm –2 through a sacrificial oxide 2