Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Dmitry V. Boychenko"'
Autor:
Denis I. Sotskov, Vladislav N. Kotov, Alexey V. Zubakov, Nikolay A. Usachev, Alexander Y. Nikiforov, Dmitry V. Boychenko
Publikováno v:
Безопасность информационных технологий, Vol 31, Iss 2, Pp 142-158 (2024)
The ultra-high frequency (UHF) tag IC’s main part of the power management unit (PMU) design technique is presented. The technique is a step-by-step algorithm for designing a PMU and consists of five interrelated stages. At the first stage, the requ
Externí odkaz:
https://doaj.org/article/18912203678644f0b84b69c6048fe70a
Autor:
Maria O. Kalashnikova, Roman S. Torshin, Georgy S. Sorokoumov, Alexander A. Demidov, Dmitry V. Boychenko
Publikováno v:
Безопасность информационных технологий, Vol 30, Iss 2, Pp 127-141 (2023)
This paper presents the results of the study of sigma-delta analog-to-digital converters` main spectral parameters` dependence on the total ionizing dose (TID). Within the framework of this study the main parameters of analog-to-digital converters (A
Externí odkaz:
https://doaj.org/article/18e510204cff48228b623772b7af6272
Autor:
Alexander I. Chumakov, Armen V. Sogoyan, Anatoly A. Smolin, Alexey O. Ahmetov, Dmitry V. Bobrovsky, Dmitry V. Boychenko, Nikolai V. Ryasnoy, Konstantin A. Chumakov, Evgeny V. Churilin, Vladimir F. Gerasimov, Vitaly V. Khaustov, Alexander A. Sashov, Anastasia V. Ulanova, Andrey V. Yanenko
Publikováno v:
Безопасность информационных технологий, Vol 27, Iss 1, Pp 83-97 (2020)
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment. These issues are of significant importance in the light of the ex
Externí odkaz:
https://doaj.org/article/ab333ff0ce35425d9e89c2daade7ec77
Autor:
K. M. Amburkin, N. A. Usachev, Nikita M. Zhidkov, Igor O. Metelkin, D. I. Sotskov, Dmitry M. Amburkin, Dmitry V. Boychenko, Alexander G. Kuznetsov, V. V. Elesin, Varvara V. Elesina
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2396-2404
This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon–germanium (SiGe) and gallium arsenide (GaAs) heter
Autor:
Alexey O. Ahmetov, Anatoly A. Smolin, Vladimir F. Gerasimov, A.V. Ulanova, A.V. Sogoyan, Vitaly V. Khaustov, Evgeny V. Churilin, Nikolai V. Ryasnoy, Alexander A. Sashov, Dmitry V. Boychenko, Andrey V. Yanenko, D. V. Bobrovsky, Konstantin A. Chumakov, Alexander I. Chumakov
Publikováno v:
Bezopasnostʹ Informacionnyh Tehnologij, Vol 27, Iss 1, Pp 83-97 (2020)
The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment. These issues are of significant importance in the light of the ex
Autor:
L.N. Kessarinskiy, F. F. Taiibov, K. A. Koval, A. S. Kameneva, A. O. Shirin, Dmitry V. Boychenko
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
The article is devoted to the problem of identifying counterfeit electronic components. The article presents the results of complex test methods such as weighing and X-ray structural analysis. It is shown that the same counterfeit defects can be dete
Autor:
A. S. Kolosova, Dmitry V. Boychenko, G. G. Davydov, P. S. Gromova, M. V. Muzafarov, Alexander A. Pechenkin
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
An advanced thermoelectric system has been developed to set a low temperature to the heat-generating power semiconductor devices. The system provides the setting the temperature down to -60°C in a volume of 80x40x12 mm3 at the heat-release up to 13
Autor:
Alexander Y. Nikiforov, Maxim S. Gorbunov, Dmitry V. Boychenko, Anatoly A. Smolin, G. G. Davydov
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
We provide a brief evolution trends overview of the modern microelectronic devices and its radiation behaviour, focusing on new structures and materials effects due to Total Ionizing Dose (TID) and Single Event effects (SEE) in CMOS elements. Evoluti
Autor:
G. G. Davydov, Anna S. Kolosova, Mikhail V. Muzafarov, Alexander A. Pechenkin, Dmitry V. Boychenko, Polina S. Gromova, Aleksandra V. Demidova
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
A description of the system for setting a lowered environment temperature based on Peltier modules is presented. The development was carried out taking into account the peculiarities of the radiation test: minimum distance from exposure source to DUT
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
In the light of the improvements of integration technologies and testing instruments, an automated testing system based on state-of-the-art technical solutions for automatic test equipment is introduced. The use of PXIe-6570 in the development proces