Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Dmitry Sizov"'
Publikováno v:
physica status solidi c. 11:674-677
III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c0c71b513ee630b214ea5920ba4bfc
https://doi.org/10.1002/pssc.201300422
https://doi.org/10.1002/pssc.201300422
Publikováno v:
Laser & Photonics Reviews. 7:963-993
Solid-state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light-emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f671e89cebe4069770de70512b1124
https://doi.org/10.1002/lpor.201300048
https://doi.org/10.1002/lpor.201300048
Publikováno v:
physica status solidi (a). 210:459-465
In this paper, we discuss experimental results and the potential for improvement of blue and green laser diode (LD) performance by using semipolar substrates. We show that the InGaN quantum well (QW) grown on a semipolar plane allows higher character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::318f21660732d3d2b2f8ff0a659ba731
https://doi.org/10.1002/pssa.201200629
https://doi.org/10.1002/pssa.201200629
Autor:
Sean Coleman, Rajaram Bhat, Aramais R. Zakharian, Kechang Song, Chung-En Zah, Dmitry Sizov, Donald Allen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1390-1401
We studied experimentally and theoretically the substrate-orientation impact on carrier transport and capture in InGaN multiple quantum well (MQW) laser diodes (LDs) with emission in the aquamarine-green spectral range. A new simulation approach was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee56b95e97c5f3e93d2ea7cfc17f3a8
https://doi.org/10.1109/jstqe.2011.2116770
https://doi.org/10.1109/jstqe.2011.2116770
Autor:
Chad S. Gallinat, Jerome Napierala, Donald Allen, Rajaram Bhat, Kechang Song, Chung-En Zah, Dmitry Sizov
Publikováno v:
physica status solidi (a). 207:1309-1312
Using varied stripe length method we systematically studied optical gain properties of blue-green 3 nm InGaN QWs grown on c-plane and (11-22) semipolar substrates. We determined that for such structures when the product of modal net gain at peak and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6ae08b488bde08ba3020b6e96499486
https://doi.org/10.1002/pssa.200983540
https://doi.org/10.1002/pssa.200983540
Autor:
Dmitry Sizov, Harry D. Saunders, Jeffrey Y. Tsao, Jerry A. Simmons, Michael E. Coltrin, Mary H. Crawford, Lauren E. S. Rohwer, Jonathan J. Wierer, Chung-En Zah, Raj Bhat, Po-Chieh Hung
Publikováno v:
Topics in Applied Physics ISBN: 9789400758629
Technologies for artificial lighting, as illustrated on the left side of Fig. 2.1, have made tremendous progress over the centuries: from fire, with an efficiency of about a tenth of a percent; to incandescent lamps, with an efficiency of about 4 %;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f79b641a1d5b671ee1f1db4212623d9
https://doi.org/10.1007/978-94-007-5863-6_2
https://doi.org/10.1007/978-94-007-5863-6_2
Publikováno v:
CLEO: 2013.
III-nitride laser diodes are explored as a next-generation light source for solid-state lighting. State-of-the-art and improved laser diodes and light-emitting diodes are compared in the areas of color rendering, efficiency, and economics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c9e038d65f42529ce417dfaef604c2
https://doi.org/10.1364/cleo_si.2013.cf1m.4
https://doi.org/10.1364/cleo_si.2013.cf1m.4
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
During recent years, several research groups have demonstrated a steady progress in increasing InGaN quantum well (QW) laser emission wavelength [1–5], however the threshold current (Fig. 1) and wall plug efficiency (WPE) are still worse than those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328fbd65abecb38ed96b032fe1392f5d
https://doi.org/10.1109/isdrs.2011.6135409
https://doi.org/10.1109/isdrs.2011.6135409
Publikováno v:
Applied Physics Express. 7:112701
We demonstrate >400 h continuous-wave operation with 50% output power degradation for InAlGaN ridge laser diodes with InGaN waveguide relaxed via interfacial misfit dislocations. The lasers with emission wavelength of 503 nm were grown on free-standi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afc2dd9790de0199d6fbdaf663548c74
https://doi.org/10.7567/apex.7.112701
https://doi.org/10.7567/apex.7.112701
Publikováno v:
Journal of Applied Physics. 113:203108
We studied optical absorption of Mg-doped AlInGaN layers using excitation-position dependent and polarization resolved photoluminescence from the slab-waveguide edge of a laser structure. The major absorption in the Mg-doped layers was found only whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56689cca50bd70f48718a0710ea8f261
https://doi.org/10.1063/1.4806997
https://doi.org/10.1063/1.4806997