Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dmitry Sheglov"'
Autor:
Ruslan Zhachuk, D. I. Rogilo, Aleksandr Latyshev, Stefano Colonna, Dmitry Sheglov, Fabio Ronci, Aleksey Petrov
Publikováno v:
Mathematical modeling in materials science of electronic component.
The atomic structure of single steps on the Si(111)- 3 3 ? -Sn surface and the dynamics of Sn adatoms in the vicinity of these steps were studied. The work was performed using scanning tunneling microscopy (STM) and ab initio calculations based on th
Autor:
A. S. Petrov, R. A. Zhachuk, Stefano Colonna, Alexander V. Latyshev, D. I. Rogilo, Fabio Ronci, Dmitry Sheglov
Publikováno v:
Physical Review B. 104
The atomic structure of well-ordered single steps on the $\mathrm{Si}(111)\ensuremath{-}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\ensuremath{-}\mathrm{Sn}$ surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. Th
Publikováno v:
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Properties of layered In 2 Se 3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3–5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimens
Autor:
K. A. Kokh, L. S. Basalaeva, Dmitry Sheglov, A. G. Milekhin, Alexander V. Latyshev, S. A. Ponomarev, N. N. Kurus, D. I. Rogilo
Publikováno v:
Journal of Physics: Conference Series. 1984:012016
The sublimation and van der Waals (vdW) epitaxy on Bi2Se3(0001) surface have been first visualized using in situ reflection electron microscopy. When Bi2Se3(0001) surface was exposed to a Se molecular beam (up to 0.1 nm/s) and heated to ∼400°C, we
Autor:
Alexander V. Latyshev, Dmitry Sheglov, D. I. Rogilo, Sergey Ponomarev, Liudmila I. Fedina, S. V. Sitnikov
Publikováno v:
Applied Surface Science. 540:148269
Using in situ reflection electron microscopy and ex situ atomic force microscopy, we have studied the morphological stability of large-scale (~10–100 μm) Si(1 1 1)-7 × 7 terraces during silicon growth and etching by oxygen and selenium. On the la
Publikováno v:
Journal of Crystal Growth. 531:125347
We have studied two-dimensional (2D) island nucleation at the initial stages of Si and Ge epitaxial growth near monatomic steps and on wide (up to 10 μm) terraces on the Si(1 1 1)-(7 × 7) surface in 500–750 °C interval by in situ ultrahigh vacuu
Publikováno v:
Journal of Crystal Growth. 529:125273
Using in situ ultrahigh vacuum reflection electron microscopy, we have first visualized the evolution of step-bunched Si(1 1 1) surface during Se beam etching depending on substrate temperature T and terrace size required for survival of etching-indu
Autor:
Mikhail A. Maslov, Dmitry Sheglov, Roman N. Serikov, N. G. Morozova, Alexander V. Latyshev, Galina A. Serebrenikova, Marina A. Zenkova, Darya A. Medvedeva, Valentin V. Vlassov
Publikováno v:
Journal of medicinal chemistry. 52(21)
Gene therapy based on gene delivery is a promising strategy for the treatment of human disease. Here we present data on structure/biological activity of new biodegradable cholesterol-based cationic lipids with various heterocyclic cationic head group