Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Dmitry S, Kuzmichev"'
Autor:
Maksim Yu. Zhuk, Nikita A. Sizykh, Dmitry S. Kuzmichev, Anastasia A. Chouprik, Sergei S. Zarubin, Evgeny S. Gornev, Andrei V. Zenkevich
Publikováno v:
ACS Applied Nano Materials. 5:8594-8601
Autor:
Aleksandra A. Koroleva, Dmitry S. Kuzmichev, Maxim G. Kozodaev, Ivan V. Zabrosaev, Evgeny V. Korostylev, Andrey M. Markeev
Publikováno v:
Applied Physics Letters. 122:022905
Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru cell in a 3D vertical memristive structure were investigated. We show that the device exhibits nonfilamentary forming-free multilevel resisti
Autor:
A. A. Sigarev, Denis I. Myakota, Andrey M. Markeev, Cheol Seong Hwang, Vladimir A. Gritsenko, Sergey S. Zarubin, Dmitry S. Kuzmichev, Pavel S. Chizov, Timofey V. Perevalov, K. V. Egorov
Publikováno v:
Journal of Materials Chemistry C. 6:9667-9674
The growth per cycle saturation behaviors depending on the precursor pulse duration, reactant pulse duration, and reactant concentration were examined for hydrogen radical enhanced atomic layer deposition (REALD) of TaOx using tantalum-ethoxide as th
Autor:
K. V. Egorov, Pavel S. Chizhov, Cheol Seong Hwang, Dmitry S. Kuzmichev, Yuri Lebedinskii, Andrey M. Markeev
Publikováno v:
ACS Applied Materials & Interfaces. 9:13286-13292
The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC2H5)5 as a Ta precursor and plasma-activated hydrogen as a reactant for the deposition of TaOx films with a controllable concentration of oxygen vacancies (VO) is reported herein.
Publikováno v:
Russian Journal of Applied Chemistry. 89:1825-1830
TaO x films with controlled ratio of Ta4+ and Ta5+ atoms were prepared at different hydrogen concentrations in plasma. As shown by X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry, the chemical state of Ta4+ corresp
Autor:
Anastasia Chouprik, Aleksandr S. Slavich, D. V. Negrov, Roman V. Kirtaev, Dmitry S. Kuzmichev
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2000461
Autor:
Timofey V. Perevalov, Andrey M. Markeev, Vladimir A. Gritsenko, A. A. Gismatulin, Dmitry S. Kuzmichev, A. G. Chernikova
Publikováno v:
physica status solidi (b). 258:2000432
Publikováno v:
physica status solidi (a). 217:1900952
Autor:
Konstantin V, Egorov, Dmitry S, Kuzmichev, Pavel S, Chizhov, Yuri Yu, Lebedinskii, Cheol Seong, Hwang, Andrey M, Markeev
Publikováno v:
ACS applied materialsinterfaces. 9(15)
The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 12:1800429