Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Dmitry Ruzmetov"'
Autor:
Mahesh R. Neupane, Chenxi Li, Harikishan Kannan, A. Glen Birdwell, Xiang Zhang, Dmitry Ruzmetov, Douglas S. Galvao, Abhijit Biswas, Tony Ivanov, Bradford B. Pate, Nithya Chakingal, Anand B. Puthirath, Pulickel M. Ajayan, Guanhui Gao, Eliezer Fernando Oliveira, Robert Vajtai
Publikováno v:
Chemistry of Materials. 33:4977-4987
Autor:
Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane
Publikováno v:
IEEE Transactions on Electron Devices. 67:2270-2275
Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe invers
Autor:
Leonard M. De La Cruz, Mahesh R. Neupane, Dmitry Ruzmetov, Tony Ivanov, James Weil, A. G. Birdwell, Pankaj B. Shah
Publikováno v:
Radar Sensor Technology XXV.
High power radio frequency (RF) transfer-doped diamond field effect transistors (FETs) are being fabricated at the Army Research Laboratory (ARL). To implement these into radar systems we have a parallel effort to extract accurate compact models from
Publikováno v:
Radar Sensor Technology XXV.
Surface induced transfer doping (SITD) is a novel, highly efficiency doping technique that is being used to invoke the p-type surface conductivity of intrinsic diamond for high-frequency, high-power electronic devices. In the SITD process, a high ele
Autor:
A. G. Birdwell, Khamsouk Kingkeo, Mahesh R. Neupane, James Weil, Leonard M. De La Cruz, Dmitry Ruzmetov, Pankaj B. Shah, Tony Ivanov
Publikováno v:
Radar Sensor Technology XXV.
Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with
Autor:
Baoming Wang, Joshua A. Robinson, Bhakti Jariwala, Tony Ivanov, Dmitry Ruzmetov, Kehao Zhang, Jun Li, Natalie Briggs, Haque, Robert A. Burke, Jordan O. Lerach, Randall M. Feenstra
Publikováno v:
Nanoscale. 10:336-341
Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthe
Autor:
Bruce Dunn, Kim McKelvey, Henry S. White, Dmitry Ruzmetov, A. Alec Talin, Farid El Gabaly, Nicholas Ware, Andrei Kolmakov
Publikováno v:
ACS Applied Materials & Interfaces. 8:32385-32391
Demonstration of three-dimensional all-solid-state Li-ion batteries (3D SSLIBs) has been a long-standing goal for numerous researchers in the battery community interested in developing high power and high areal energy density storage solutions for a
Autor:
Robert A. Burke, Albert V. Davydov, Frank J. Crowne, Sarah M. Eichfeld, Terrance O'Regan, Kehao Zhang, Dmitry Ruzmetov, Tony Ivanov, Joshua A. Robinson, Gheorghe Stan, A. Glen Birdwell, Ganesh R. Bhimanapati, Pankaj B. Shah, Berc Kalanyan
Publikováno v:
ACS Nano. 10:3580-3588
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on
Autor:
A. Glen Birdwell, Mahesh R. Neupane, Bishwajit Debnath, Pankaj B. Shah, Kevin G. Crawford, Tony Ivanov, Dmitry Ruzmetov, James Weil, P. Alex Greaney, Pegah S. Mirabedini
Publikováno v:
Applied Physics Letters. 117:121901
We report a first-principles study of the structural and electronic properties of two-dimensional (2D) layer/hydrogen-terminated diamond (100) heterostructures. Both the 2D layers exhibit weak van-der-Waals (vdW) interactions and develop rippled conf
Autor:
A. Glen Birdwell, Edward F. C. Byrd, Dmitry Ruzmetov, Terrance O'Regan, DeCarlos E. Taylor, Mahesh R. Neupane, Tony Ivanov, Pankaj B. Shah, Barbara Nichols, Frank J. Crowne, Matthew L. Chin, Robert A. Burke
Publikováno v:
DRC
In recent years, large investments into the research of semiconducting two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs) have elucidated interesting device related physical phenomena such as valleytronics [1]