Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dmitry M. Amburkin"'
Autor:
K. M. Amburkin, N. A. Usachev, Nikita M. Zhidkov, Igor O. Metelkin, D. I. Sotskov, Dmitry M. Amburkin, Dmitry V. Boychenko, Alexander G. Kuznetsov, V. V. Elesin, Varvara V. Elesina
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2396-2404
This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon–germanium (SiGe) and gallium arsenide (GaAs) heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d5b42db1462e1dff136e9d770ea5a4
https://doi.org/10.1109/tns.2020.3015560
https://doi.org/10.1109/tns.2020.3015560
Autor:
D. I. Sotskov, K. M. Amburkin, N. A. Usachev, Alexander Y. Nikiforov, V. V. Elesin, Dmitry M. Amburkin, G. N. Nazarova, G. V. Chukov
Publikováno v:
EWDTS
Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs imple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ebf276cdd2289570837688687ddd37
https://doi.org/10.1109/ewdts.2018.8524835
https://doi.org/10.1109/ewdts.2018.8524835
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
This paper presents the study of transient radiation effects in SOI CMOS RF IC's and discrete MOS transistors. Experiments show that the sensitivity of SOI RF IC's (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178bf4b5e5ff8bb8a997870133aae962
https://doi.org/10.1109/radecs.2015.7365628
https://doi.org/10.1109/radecs.2015.7365628